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LF356M PDF预览

LF356M

更新时间: 2024-11-21 22:47:11
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器放大器电路光电二极管
页数 文件大小 规格书
23页 1080K
描述
JFET Input Operational Amplifiers

LF356M 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:SOIC包装说明:SOP-8
针数:8Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.05Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.0002 µA25C 时的最大偏置电流 (IIB):0.0002 µA
最小共模抑制比:80 dB标称共模抑制比:100 dB
频率补偿:YES最大输入失调电流 (IIO):0.002 µA
最大输入失调电压:13000 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:4.9 mm
低-偏置:YES低-失调:NO
湿度敏感等级:1负供电电压上限:-18 V
标称负供电电压 (Vsup):-15 V功能数量:1
端子数量:8最高工作温度:70 °C
最低工作温度:封装主体材料:PLASTIC/EPOXY
封装代码:SOP封装等效代码:SOP8,.25
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
包装方法:RAIL峰值回流温度(摄氏度):235
电源:+-15 V认证状态:Not Qualified
座面最大高度:1.75 mm标称压摆率:12 V/us
子类别:Operational Amplifier最大压摆率:10 mA
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:YES技术:BIPOLAR
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
标称均一增益带宽:5000 kHz最小电压增益:15000
宽度:3.9 mmBase Number Matches:1

LF356M 数据手册

 浏览型号LF356M的Datasheet PDF文件第2页浏览型号LF356M的Datasheet PDF文件第3页浏览型号LF356M的Datasheet PDF文件第4页浏览型号LF356M的Datasheet PDF文件第5页浏览型号LF356M的Datasheet PDF文件第6页浏览型号LF356M的Datasheet PDF文件第7页 
December 2001  
LF155/LF156/LF256/LF257/LF355/LF356/LF357  
JFET Input Operational Amplifiers  
n Logarithmic amplifiers  
n Photocell amplifiers  
These are the first monolithic JFET input operational ampli-  
n Sample and Hold circuits  
General Description  
fiers to incorporate well matched, high voltage JFETs on the  
Common Features  
same chip with standard bipolar transistors (BI-FET Tech-  
nology). These amplifiers feature low input bias and offset  
currents/low offset voltage and offset voltage drift, coupled  
with offset adjust which does not degrade drift or  
common-mode rejection. The devices are also designed for  
high slew rate, wide bandwidth, extremely fast settling time,  
low voltage and current noise and a low 1/f noise corner.  
n Low input bias current: 30pA  
n Low Input Offset Current: 3pA  
n High input impedance: 1012Ω  
n Low input noise current:  
n High common-mode rejection ratio: 100 dB  
n Large dc voltage gain: 106 dB  
Features  
Advantages  
Uncommon Features  
n Replace expensive hybrid and module FET op amps  
n Rugged JFETs allow blow-out free handling compared  
with MOSFET input devices  
n Excellent for low noise applications using either high or  
low source impedancevery low 1/f corner  
n Offset adjust does not degrade drift or common-mode  
rejection as in most monolithic amplifiers  
n New output stage allows use of large capacitive loads  
(5,000 pF) without stability problems  
LF155/ LF156/ LF257/  
Units  
LF355  
LF256/  
LF356  
1.5  
LF357  
(AV=5)  
1.5  
j
Extremely  
fast settling  
time to  
4
µs  
0.01%  
j
j
j
Fast slew  
rate  
5
12  
5
50  
20  
12  
V/µs  
MHz  
n Internal compensation and large differential input voltage  
capability  
Wide gain  
bandwidth  
Low input  
noise  
2.5  
20  
Applications  
n Precision high speed integrators  
n Fast D/A and A/D converters  
n High impedance buffers  
12  
voltage  
n Wideband, low noise, low drift amplifiers  
Simplified Schematic  
00564601  
*
3pF in LF357 series.  
BI-FET , BI-FET II are trademarks of National Semiconductor Corporation.  
© 2001 National Semiconductor Corporation  
DS005646  
www.national.com  

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