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LF356M PDF预览

LF356M

更新时间: 2024-11-22 12:48:31
品牌 Logo 应用领域
德州仪器 - TI 运算放大器光电二极管
页数 文件大小 规格书
32页 2114K
描述
LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers

LF356M 技术参数

生命周期:Not Recommended零件包装代码:SOIC
包装说明:SOP-8针数:8
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8542.33.00.01风险等级:6.88
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.0002 µA25C 时的最大偏置电流 (IIB):0.0002 µA
最小共模抑制比:80 dB标称共模抑制比:100 dB
频率补偿:YES最大输入失调电流 (IIO):0.00002 µA
最大输入失调电压:13000 µVJESD-30 代码:R-PDSO-G8
JESD-609代码:e0长度:4.9 mm
低-偏置:YES低-失调:NO
微功率:NO湿度敏感等级:1
负供电电压上限:-18 V标称负供电电压 (Vsup):-15 V
功能数量:1端子数量:8
最高工作温度:70 °C最低工作温度:
封装主体材料:PLASTIC/EPOXY封装代码:SOP
封装等效代码:SOP8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE包装方法:TUBE
峰值回流温度(摄氏度):235功率:NO
电源:+-15 V可编程功率:NO
认证状态:Not Qualified座面最大高度:1.75 mm
最小摆率:7.5 V/us标称压摆率:12 V/us
子类别:Operational Amplifier最大压摆率:7 mA
供电电压上限:18 V标称供电电压 (Vsup):15 V
表面贴装:YES技术:BIPOLAR
温度等级:COMMERCIAL端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:5000 kHz最小电压增益:15000
宽带:NO宽度:3.9 mm
Base Number Matches:1

LF356M 数据手册

 浏览型号LF356M的Datasheet PDF文件第2页浏览型号LF356M的Datasheet PDF文件第3页浏览型号LF356M的Datasheet PDF文件第4页浏览型号LF356M的Datasheet PDF文件第5页浏览型号LF356M的Datasheet PDF文件第6页浏览型号LF356M的Datasheet PDF文件第7页 
LF155, LF156, LF355, LF356, LF357  
www.ti.com  
SNOSBH0C MAY 2000REVISED MARCH 2013  
LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers  
Check for Samples: LF155, LF156, LF355, LF356, LF357  
1
FEATURES  
DESCRIPTION  
These are the first monolithic JFET input operational  
amplifiers to incorporate well matched, high voltage  
JFETs on the same chip with standard bipolar  
transistors ( BI-FET™ Technology). These amplifiers  
feature low input bias and offset currents/low offset  
voltage and offset voltage drift, coupled with offset  
adjust which does not degrade drift or common-mode  
rejection. The devices are also designed for high slew  
rate, wide bandwidth, extremely fast settling time, low  
voltage and current noise and a low 1/f noise corner.  
23  
Advantages  
Replace Expensive Hybrid and Module FET Op  
Amps  
Rugged JFETs Allow Blow-Out Free Handling  
Compared with MOSFET Input Devices  
Excellent for Low Noise Applications Using  
Either High or Low Source Impedance—Very  
Low 1/f Corner  
Offset Adjust Does Not Degrade Drift or  
Common-Mode Rejection as in Most  
Monolithic Amplifiers  
Common Features  
Low Input Bias Current: 30pA  
Low Input Offset Current: 3pA  
High Input Impedance: 1012Ω  
Low Input Noise Current: 0.01 pA/Hz  
High Common-Mode Rejection Ratio: 100 dB  
Large DC Voltage Gain: 106 dB  
New Output Stage Allows Use of Large  
Capacitive Loads (5,000 pF) without Stability  
Problems  
Internal Compensation and Large Differential  
Input Voltage Capability  
APPLICATIONS  
Table 1. Uncommon Features  
Precision High Speed Integrators  
Fast D/A and A/D Converters  
High Impedance Buffers  
LF155/ LF156/ LF257/  
LF355 LF256/ LF357  
LF356 (AV=5)  
Units  
Extremely fast  
settling time to 0.01%  
4
1.5  
1.5  
μs  
Wideband, Low Noise, Low Drift Amplifiers  
Logarithmic Amplifiers  
Fast slew rate  
5
12  
5
50  
20  
12  
V/µs  
MHz  
Wide gain bandwidth  
2.5  
20  
Photocell Amplifiers  
Low input noise  
voltage  
12  
nV / Hz  
Sample and Hold Circuits  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
3
BI-FET is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2000–2013, Texas Instruments Incorporated  

LF356M 替代型号

型号 品牌 替代类型 描述 数据表
LF356M/NOPB TI

完全替代

JFET Input Operational Amplifiers
LF356MX/NOPB TI

完全替代

JFET Input Operational Amplifiers
LF356MX TI

完全替代

JFET Input Operational Amplifiers

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Operational Amplifier, 1 Func, 13000uV Offset-Max, PDIP8