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LF356AH PDF预览

LF356AH

更新时间: 2024-11-22 22:47:11
品牌 Logo 应用领域
美国国家半导体 - NSC 运算放大器放大器电路
页数 文件大小 规格书
23页 1080K
描述
Series Monolithic JFET Input Operational Amplifiers

LF356AH 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:BCY包装说明:TO-5, CAN8,.2
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.33.00.01
风险等级:5.19Is Samacsys:N
放大器类型:OPERATIONAL AMPLIFIER架构:VOLTAGE-FEEDBACK
最大平均偏置电流 (IIB):0.00005 µA25C 时的最大偏置电流 (IIB):0.00005 µA
最小共模抑制比:85 dB标称共模抑制比:100 dB
频率补偿:YES最大输入失调电流 (IIO):0.00001 µA
最大输入失调电压:2300 µVJESD-30 代码:O-MBCY-W8
JESD-609代码:e0低-偏置:YES
低-失调:NO负供电电压上限:-18 V
标称负供电电压 (Vsup):-18 V功能数量:1
端子数量:8最高工作温度:70 °C
最低工作温度:封装主体材料:METAL
封装代码:TO-5封装等效代码:CAN8,.2
封装形状:ROUND封装形式:CYLINDRICAL
峰值回流温度(摄氏度):NOT SPECIFIED电源:+-15/+-18 V
认证状态:Not Qualified最小摆率:10 V/us
标称压摆率:12 V/us子类别:Operational Amplifier
最大压摆率:10 mA供电电压上限:18 V
标称供电电压 (Vsup):18 V表面贴装:NO
技术:BIPOLAR温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:WIRE
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
标称均一增益带宽:4500 kHz最小电压增益:25000
Base Number Matches:1

LF356AH 数据手册

 浏览型号LF356AH的Datasheet PDF文件第2页浏览型号LF356AH的Datasheet PDF文件第3页浏览型号LF356AH的Datasheet PDF文件第4页浏览型号LF356AH的Datasheet PDF文件第5页浏览型号LF356AH的Datasheet PDF文件第6页浏览型号LF356AH的Datasheet PDF文件第7页 
December 2001  
LF155/LF156/LF256/LF257/LF355/LF356/LF357  
JFET Input Operational Amplifiers  
n Logarithmic amplifiers  
n Photocell amplifiers  
These are the first monolithic JFET input operational ampli-  
n Sample and Hold circuits  
General Description  
fiers to incorporate well matched, high voltage JFETs on the  
Common Features  
same chip with standard bipolar transistors (BI-FET Tech-  
nology). These amplifiers feature low input bias and offset  
currents/low offset voltage and offset voltage drift, coupled  
with offset adjust which does not degrade drift or  
common-mode rejection. The devices are also designed for  
high slew rate, wide bandwidth, extremely fast settling time,  
low voltage and current noise and a low 1/f noise corner.  
n Low input bias current: 30pA  
n Low Input Offset Current: 3pA  
n High input impedance: 1012Ω  
n Low input noise current:  
n High common-mode rejection ratio: 100 dB  
n Large dc voltage gain: 106 dB  
Features  
Advantages  
Uncommon Features  
n Replace expensive hybrid and module FET op amps  
n Rugged JFETs allow blow-out free handling compared  
with MOSFET input devices  
n Excellent for low noise applications using either high or  
low source impedancevery low 1/f corner  
n Offset adjust does not degrade drift or common-mode  
rejection as in most monolithic amplifiers  
n New output stage allows use of large capacitive loads  
(5,000 pF) without stability problems  
LF155/ LF156/ LF257/  
Units  
LF355  
LF256/  
LF356  
1.5  
LF357  
(AV=5)  
1.5  
j
Extremely  
fast settling  
time to  
4
µs  
0.01%  
j
j
j
Fast slew  
rate  
5
12  
5
50  
20  
12  
V/µs  
MHz  
n Internal compensation and large differential input voltage  
capability  
Wide gain  
bandwidth  
Low input  
noise  
2.5  
20  
Applications  
n Precision high speed integrators  
n Fast D/A and A/D converters  
n High impedance buffers  
12  
voltage  
n Wideband, low noise, low drift amplifiers  
Simplified Schematic  
00564601  
*
3pF in LF357 series.  
BI-FET , BI-FET II are trademarks of National Semiconductor Corporation.  
© 2001 National Semiconductor Corporation  
DS005646  
www.national.com  

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