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LF355

更新时间: 2024-11-04 12:18:39
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描述
JFET Input Operational Amplifiers

LF355 数据手册

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LF155, LF156, LF355, LF356, LF357  
www.ti.com  
SNOSBH0C MAY 2000REVISED MARCH 2013  
LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers  
Check for Samples: LF155, LF156, LF355, LF356, LF357  
1
FEATURES  
DESCRIPTION  
These are the first monolithic JFET input operational  
amplifiers to incorporate well matched, high voltage  
JFETs on the same chip with standard bipolar  
transistors ( BI-FET™ Technology). These amplifiers  
feature low input bias and offset currents/low offset  
voltage and offset voltage drift, coupled with offset  
adjust which does not degrade drift or common-mode  
rejection. The devices are also designed for high slew  
rate, wide bandwidth, extremely fast settling time, low  
voltage and current noise and a low 1/f noise corner.  
23  
Advantages  
Replace Expensive Hybrid and Module FET Op  
Amps  
Rugged JFETs Allow Blow-Out Free Handling  
Compared with MOSFET Input Devices  
Excellent for Low Noise Applications Using  
Either High or Low Source Impedance—Very  
Low 1/f Corner  
Offset Adjust Does Not Degrade Drift or  
Common-Mode Rejection as in Most  
Monolithic Amplifiers  
Common Features  
Low Input Bias Current: 30pA  
Low Input Offset Current: 3pA  
High Input Impedance: 1012Ω  
Low Input Noise Current: 0.01 pA/Hz  
High Common-Mode Rejection Ratio: 100 dB  
Large DC Voltage Gain: 106 dB  
New Output Stage Allows Use of Large  
Capacitive Loads (5,000 pF) without Stability  
Problems  
Internal Compensation and Large Differential  
Input Voltage Capability  
APPLICATIONS  
Table 1. Uncommon Features  
Precision High Speed Integrators  
Fast D/A and A/D Converters  
High Impedance Buffers  
LF155/ LF156/ LF257/  
LF355 LF256/ LF357  
LF356 (AV=5)  
Units  
Extremely fast  
settling time to 0.01%  
4
1.5  
1.5  
μs  
Wideband, Low Noise, Low Drift Amplifiers  
Logarithmic Amplifiers  
Fast slew rate  
5
12  
5
50  
20  
12  
V/µs  
MHz  
Wide gain bandwidth  
2.5  
20  
Photocell Amplifiers  
Low input noise  
voltage  
12  
nV / Hz  
Sample and Hold Circuits  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
3
BI-FET is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2000–2013, Texas Instruments Incorporated  

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