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LF256H/NOPB PDF预览

LF256H/NOPB

更新时间： 2024-01-12 12:59:51
品牌 Logo 应用领域
德州仪器 - TI 运算放大器放大器电路
页数 文件大小 规格书
32页 2114K
描述
JFET Input Operational Amplifier 8-TO-99 -25 to 85

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LF256H/NOPB 技术参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.89
放大器类型：OPERATIONAL AMPLIFIER架构：VOLTAGE-FEEDBACK
频率补偿：YES最大输入失调电压：6500 µV
JESD-30 代码：O-MBCY-W8JESD-609代码：e0
低-偏置：YES低-失调：NO
功能数量：1端子数量：8
最高工作温度：85 °C最低工作温度：-25 °C
封装主体材料：METAL封装等效代码：CAN8,.2
封装形状：ROUND封装形式：CYLINDRICAL
电源：+-15/+-20 V认证状态：Not Qualified
子类别：Operational Amplifiers温度等级：OTHER
端子面层：Tin/Lead (Sn/Pb)端子形式：WIRE
端子位置：BOTTOM

LF256H/NOPB 数据手册

 浏览型号LF256H/NOPB的Datasheet PDF文件第2页浏览型号LF256H/NOPB的Datasheet PDF文件第3页浏览型号LF256H/NOPB的Datasheet PDF文件第4页浏览型号LF256H/NOPB的Datasheet PDF文件第5页浏览型号LF256H/NOPB的Datasheet PDF文件第6页浏览型号LF256H/NOPB的Datasheet PDF文件第7页 
LF155, LF156, LF355, LF356, LF357  
www.ti.com  
SNOSBH0C –MAY 2000–REVISED MARCH 2013  
LF155/LF156/LF256/LF257/LF355/LF356/LF357 JFET Input Operational Amplifiers  
Check for Samples: LF155, LF156, LF355, LF356, LF357  
1
FEATURES  
DESCRIPTION  
These are the first monolithic JFET input operational  
amplifiers to incorporate well matched, high voltage  
JFETs on the same chip with standard bipolar  
transistors ( BI-FET™ Technology). These amplifiers  
feature low input bias and offset currents/low offset  
voltage and offset voltage drift, coupled with offset  
adjust which does not degrade drift or common-mode  
rejection. The devices are also designed for high slew  
rate, wide bandwidth, extremely fast settling time, low  
voltage and current noise and a low 1/f noise corner.  
23  
Advantages  
•
•
•
Replace Expensive Hybrid and Module FET Op  
Amps  
Rugged JFETs Allow Blow-Out Free Handling  
Compared with MOSFET Input Devices  
Excellent for Low Noise Applications Using  
Either High or Low Source Impedance—Very  
Low 1/f Corner  
•
•
•
Offset Adjust Does Not Degrade Drift or  
Common-Mode Rejection as in Most  
Monolithic Amplifiers  
Common Features  
•
•
•
•
•
•
Low Input Bias Current: 30pA  
Low Input Offset Current: 3pA  
High Input Impedance: 1012Ω  
Low Input Noise Current: 0.01 pA/√Hz  
High Common-Mode Rejection Ratio: 100 dB  
Large DC Voltage Gain: 106 dB  
New Output Stage Allows Use of Large  
Capacitive Loads (5,000 pF) without Stability  
Problems  
Internal Compensation and Large Differential  
Input Voltage Capability  
APPLICATIONS  
Table 1. Uncommon Features  
•
•
•
•
•
•
•
Precision High Speed Integrators  
Fast D/A and A/D Converters  
High Impedance Buffers  
LF155/ LF156/ LF257/  
LF355 LF256/ LF357  
LF356 (AV=5)  
Units  
Extremely fast  
settling time to 0.01%  
4
1.5  
1.5  
μs  
Wideband, Low Noise, Low Drift Amplifiers  
Logarithmic Amplifiers  
Fast slew rate  
5
12  
5
50  
20  
12  
V/µs  
MHz  
Wide gain bandwidth  
2.5  
20  
Photocell Amplifiers  
Low input noise  
voltage  
12  
nV / √Hz  
Sample and Hold Circuits  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of  
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
3
BI-FET is a trademark of Texas Instruments.  
All other trademarks are the property of their respective owners.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2000–2013, Texas Instruments Incorporated  
1234567...32

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