Datasheet > LF2181NTR

LF2181NTR

更新时间： 2024-11-06 14:56:43

品牌	Logo	应用领域
力特 - LITTELFUSE		栅极驱动高压驱动器
页数	文件大小	规格书
11页	744K
描述
高压侧和低压侧栅极驱动器集成电路功能与特色: 应用:

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中文翻译

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LF2181NTR 数据手册

LF2181N

High-Side / Low-Side Gate Driver

Features

Description

 Floating high-side driver in bootstrap operation

The LF2181N is a high voltage, high speed gate driver

capable of driving N-channel MOSFETs and IGBTs in a half

bridge conﬁguration. The process technology enables

the LF2181N’s high side to switch to 600V in a bootstrap

operation.

to 600V

 Drives two N-channel MOSFETs or IGBTs in a

half bridge conﬁguration

 1.9A source / 2.3A sink output current capability

 Outputs tolerant to negative transients

 Wide low side gate driver supply voltage: 10V to 20V

 Logic input (HIN and LIN) 3.3V capability

 Schmitt triggered logic inputs with internal pull down

The LF2181N logic inputs are compatible with standard

TTL and CMOS levels (down to 3.3V) to interface easily

with controlling devices. The driver outputs feature high

pulse current buﬀers designed for minimum driver cross

conduction.

 Under Voltage Lockout (UVLO ) for high and low side

The LF2181N is oﬀered in SOIC(N)-8 package and operate

over the extended temperature range of -40 °C to +125 °C .

drivers

 Extended temperature range: -40°C to +125°C

Applications

 DC-DC Converters

 AC-DC Inverters

 Motor Controls

 Class D Power Ampliﬁers

SOIC(N)-8

Ordering Information

Year Year Week Week

Part#

Package Pack / Qty

Mark

Typical Application

YYWW

LF2181NTR SOIC(N)-8 T&R / 2500

LF2181N

Up to 600V

LOT ID

LF2181N

V_B

V_S

V_CC

HIN

LIN

LOAD

HIN

LLIINN

COM

DS-LF2181N-R01

12 3 4 5 6 7...11

中文翻译

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