LF155

更新时间： 2024-10-18 22:47:11

品牌	Logo	应用领域
美国国家半导体 - NSC		运算放大器
页数	文件大小	规格书
23页	1080K
描述
JFET Input Operational Amplifiers

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数据手册

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LF155 数据手册

December 2001

LF155/LF156/LF256/LF257/LF355/LF356/LF357

JFET Input Operational Amplifiers

n Logarithmic amplifiers

n Photocell amplifiers

These are the first monolithic JFET input operational ampli-

n Sample and Hold circuits

General Description

fiers to incorporate well matched, high voltage JFETs on the

Common Features

™

same chip with standard bipolar transistors (BI-FET Tech-

nology). These amplifiers feature low input bias and offset

currents/low offset voltage and offset voltage drift, coupled

with offset adjust which does not degrade drift or

common-mode rejection. The devices are also designed for

high slew rate, wide bandwidth, extremely fast settling time,

low voltage and current noise and a low 1/f noise corner.

n Low input bias current: 30pA

n Low Input Offset Current: 3pA

n High input impedance: 10¹²Ω

n Low input noise current:

n High common-mode rejection ratio: 100 dB

n Large dc voltage gain: 106 dB

Features

Advantages

Uncommon Features

n Replace expensive hybrid and module FET op amps

n Rugged JFETs allow blow-out free handling compared

with MOSFET input devices

n Excellent for low noise applications using either high or

low source impedance—very low 1/f corner

n Offset adjust does not degrade drift or common-mode

rejection as in most monolithic amplifiers

n New output stage allows use of large capacitive loads

(5,000 pF) without stability problems

LF155/ LF156/ LF257/

Units

LF355

LF256/

LF356

1.5

LF357

(A_V=5)

1.5

Extremely

fast settling

time to

µs

0.01%

Fast slew

rate

V/µs

MHz

n Internal compensation and large differential input voltage

capability

Wide gain

bandwidth

Low input

noise

2.5

Applications

n Precision high speed integrators

n Fast D/A and A/D converters

n High impedance buffers

voltage

n Wideband, low noise, low drift amplifiers

Simplified Schematic

00564601

3pF in LF357 series.

™

BI-FET , BI-FET II are trademarks of National Semiconductor Corporation.

DS005646

www.national.com

12 3 4 5 6 7...23

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