5秒后页面跳转
LET9045STR PDF预览

LET9045STR

更新时间: 2024-09-16 21:16:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 放大器光电二极管晶体管
页数 文件大小 规格书
9页 290K
描述
45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package

LET9045STR 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:SOT包装说明:PLASTIC, POWERSO-10R, SMD, 2 PIN
针数:10Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:11 weeks
风险等级:5.68其他特性:HIGH RELIABILITY
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:80 V最大漏极电流 (Abs) (ID):5 A
最大漏极电流 (ID):9 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:R-PDSO-F2
JESD-609代码:e3湿度敏感等级:3
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:165 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):250
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):160 W
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:FLAT端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:AMPLIFIER
晶体管元件材料:SILICONBase Number Matches:1

LET9045STR 数据手册

 浏览型号LET9045STR的Datasheet PDF文件第2页浏览型号LET9045STR的Datasheet PDF文件第3页浏览型号LET9045STR的Datasheet PDF文件第4页浏览型号LET9045STR的Datasheet PDF文件第5页浏览型号LET9045STR的Datasheet PDF文件第6页浏览型号LET9045STR的Datasheet PDF文件第7页 
LET9045S  
RF POWER TRANSISTORS  
Ldmos Enhanced Technology in Plastic Package  
TARGET DATA  
N-CHANNEL ENHANCEMENT-MODE LATERAL  
MOSFETs  
EXCELLENT THERMAL STABILITY  
COMMON SOURCE CONFIGURATION  
P  
= 45 W with 17 dB gain MIN @ 945 MHz /  
OUT  
28V  
NEW RF PLASTIC PACKAGE  
HIGH GAIN  
PowerSO-10RF  
(straight lead)  
ORDER CODE  
LET9045S  
BRANDING  
LET9045S  
ESD PROTECTION  
AVAILABLE IN TAPE & REEL with TR SUFFIX  
PIN CONNECTION  
DESCRIPTION  
The LET9045S is a common source N-Channel,  
enhancement-mode lateral Field-Effect RF power  
transistor. It is designed for high gain, broad band  
commercial and industrial applications. It operates  
at 28 V in common source mode at frequencies up  
to 1 GHz. LET9045S boasts the excellent gain,  
linearity and reliability of ST’s latest LDMOS  
technology mounted in the first true SMD plastic  
RF power package, PowerSO-10RF. LET9045S’s  
superior linearity performance makes it an ideal  
solution for base station applications.  
SOURCE  
GATE  
DRAIN  
The PowerSO-10 plastic package, designed to  
offer high reliability, is the first ST JEDEC  
approved, high power SMD package. It has been  
specially optimized for RF needs and offers  
excellent RF performances and ease of assembly.  
Mounting recommendations are available in  
www.st.com/rf/ (look for application note AN1294)  
ABSOLUTE MAXIMUM RATINGS (T  
= 25°C)  
CASE  
Symbol  
Parameter  
Value  
65  
Unit  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
(BR)DSS  
V
-0.5 to +15  
5
V
GS  
I
D
A
P
Power Dissipation  
160  
W
°C  
°C  
DISS  
Tj  
Max. Operating Junction Temperature  
Storage Temperature  
165  
T
-65 to +150  
STG  
THERMAL DATA  
R
th(j-c)  
Junction -Case Thermal Resistance  
0.85  
°C/W  
February, 27 2003  
1/9  

LET9045STR 替代型号

型号 品牌 替代类型 描述 数据表
LET9045S STMICROELECTRONICS

类似代替

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

与LET9045STR相关器件

型号 品牌 获取价格 描述 数据表
LET9045TR STMICROELECTRONICS

获取价格

45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package
LET9060C STMICROELECTRONICS

获取价格

RF POWER TRANSISTORS Ldmos Enhanced Technology
LET9060F STMICROELECTRONICS

获取价格

60W 28V HF to 2GHz LDMOS TRANSISTOR in flangeless package
LET9060S STMICROELECTRONICS

获取价格

RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET9060STR STMICROELECTRONICS

获取价格

60W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package
LET9060TR STMICROELECTRONICS

获取价格

60W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package
LET9070CB STMICROELECTRONICS

获取价格

70W 28V HF to 2GHz LDMOS TRANSISTOR
LET9085 STMICROELECTRONICS

获取价格

RF POWER TRANSISTORS Ldmos Enhanced Technology
LET9120M STMICROELECTRONICS

获取价格

UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, ROHS COMPLIANT, PLASTIC, M252, 4 PIN
LET9130 STMICROELECTRONICS

获取价格

RF POWER TRANSISTORS Ldmos Enhanced Technology