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LET9002 PDF预览

LET9002

更新时间: 2024-09-15 22:31:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体射频场效应晶体管放大器
页数 文件大小 规格书
4页 43K
描述
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

LET9002 技术参数

生命周期:Obsolete包装说明:5 X 5 MM, PLASTIC, SMD, POWERFLAT-5
针数:5Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
Is Samacsys:N其他特性:HIGH RELIABILITY
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:65 V最大漏极电流 (Abs) (ID):0.25 A
最大漏极电流 (ID):4 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:ULTRA HIGH FREQUENCY BANDJESD-30 代码:S-PQCC-N5
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:SQUARE
封装形式:CHIP CARRIER极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):4 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:NO LEAD端子位置:QUAD
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

LET9002 数据手册

 浏览型号LET9002的Datasheet PDF文件第2页浏览型号LET9002的Datasheet PDF文件第3页浏览型号LET9002的Datasheet PDF文件第4页 
LET9002  
RF POWER TRANSISTORS  
Ldmos Enhanced Technology in Plastic Package  
TARGET DATA  
N-CHANNEL ENHANCEMENT-MODE LATERAL  
MOSFETs  
EXCELLENT THERMAL STABILITY  
COMMON SOURCE CONFIGURATION  
P  
= 2 W with 17 dB gain @ 960 MHz / 26 V  
OUT  
NEW LEADLESS PLASTIC PACKAGE  
ESD PROTECTION  
PowerFLAT(5x5)  
SUPPLIED IN TAPE & REEL OF 3K UNITS  
ORDER CODE  
LET9002  
BRANDING  
9002  
PIN CONNECTION  
DESCRIPTION  
The LET9002 is a common source N-Channel, en-  
hancement-mode lateral Field-Effect RF power  
transistor designed for broadband commercial and  
industrial applications at frequencies up to 1000  
MHz. The LET9002 is designed for high gain and  
broadband performance operating in common  
source mode at 26 V. LET9002 boasts the  
excellent gain, linearity and reliability of ST’s latest  
LDMOS technology mounted in the innovative  
leadless SMD plastic package, PowerFLAT™.  
It is ideal for digital cellular BTS applications  
requiring high linearity.  
TOP VIEW  
ABSOLUTE MAXIMUM RATINGS (T  
= 25 °C)  
CASE  
Symbol  
Parameter  
Value  
65  
Unit  
V
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
(BR)DSS  
V
-0.5 to +15  
0.25  
V
GS  
I
D
A
P
Power Dissipation (@ Tc = 70°C)  
Max. Operating Junction Temperature  
Storage Temperature  
4
W
°C  
°C  
DISS  
Tj  
150  
T
-65 to +150  
STG  
THERMAL DATA  
R
th(j-c)  
Junction -Case Thermal Resistance  
20  
°C/W  
April, 15 2003  
1/4  

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