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LET21030C PDF预览

LET21030C

更新时间: 2024-11-08 22:31:23
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管射频
页数 文件大小 规格书
4页 65K
描述
RF POWER TRANSISTORS Ldmos Enhanced Technology

LET21030C 技术参数

生命周期:Obsolete包装说明:PLASTIC, CASE 465E-03, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.84
外壳连接:SOURCE配置:SINGLE
最小漏源击穿电压:65 V最大漏极电流 (Abs) (ID):4 A
最大漏极电流 (ID):4 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高频带:S BANDJESD-30 代码:R-PDFM-F2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:200 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):65 W认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:FLAT端子位置:DUAL
晶体管应用:AMPLIFIER晶体管元件材料:SILICON
Base Number Matches:1

LET21030C 数据手册

 浏览型号LET21030C的Datasheet PDF文件第2页浏览型号LET21030C的Datasheet PDF文件第3页浏览型号LET21030C的Datasheet PDF文件第4页 
LET21030C  
RF POWER TRANSISTORS  
Ldmos Enhanced Technology  
TARGET DATA  
Designed for GSM / EDGE / IS-97 / WCDMA  
applications  
EXCELLENT THERMAL STABILITY  
P  
= 30 W with 11 dB gain @ 2170 MHz  
OUT  
BeO FREE PACKAGE  
INTERNAL INPUT MATCHING  
ESD PROTECTION  
CASE 465E–03, STYLE 1  
epoxy sealed  
ORDER CODE  
BRANDING  
LET21030C  
LET21030C  
DESCRIPTION  
The LET21030C is a common source N-Channel  
enhancement-mode lateral Field-Effect RF power  
transistor designed for broadband commercial and  
industrial applications at frequencies up to 2.1  
GHz. The LET21030C is designed for high gain and  
broadband performance operating in common  
source mode at 26 V. Its internal matching makes  
it ideal for base station applications requiring high  
linearity.  
PIN CONNECTION  
1
3
2
1. Drain  
2. Gate  
3. Source  
ABSOLUTE MAXIMUM RATINGS (T  
= 25 °C)  
CASE  
Symbol  
Parameter  
Value  
65  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current  
V
V
(BR)DSS  
V
-0.5 to +15  
GS  
I
D
4
65  
A
P
Power Dissipation (@ Tc = 70 °C)  
Max. Operating Junction Temperature  
Storage Temperature  
W
°C  
°C  
DISS  
Tj  
200  
T
STG  
-65 to +200  
THERMAL DATA  
R
th(j-c)  
Junction -Case Thermal Resistance  
2
°C/W  
January, 24 2003  
1/4  

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