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LET20030S

更新时间： 2024-11-08 22:31:23

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体射频场效应晶体管光电二极管放大器
页数	文件大小	规格书
4页	46K
描述
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package

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中文翻译

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技术参数
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LET20030S 技术参数

生命周期：	Obsolete	零件包装代码：	SOT
包装说明：	PLASTIC, SMD, POWER, SO-10RF, 2 PIN	针数：	10
Reach Compliance Code：	compliant	ECCN代码：	EAR99
风险等级：	5.84	Is Samacsys：	N
其他特性：	HIGH RELIABILITY	外壳连接：	SOURCE
配置：	SINGLE	最小漏源击穿电压：	65 V
FET 技术：	METAL-OXIDE SEMICONDUCTOR	最高频带：	L BAND
JESD-30 代码：	R-PDSO-F2	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	165 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	140 W
认证状态：	Not Qualified	子类别：	FET General Purpose Power
表面贴装：	YES	端子形式：	FLAT
端子位置：	DUAL	晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON	Base Number Matches：	1

LET20030S 数据手册

LET20030S

RF POWER TRANSISTORS

Ldmos Enhanced Technology in Plastic Package

TARGET DATA

Designed for GSM / EDGE / IS-97 applications

• EXCELLENT THERMAL STABILITY

• COMMON SOURCE CONFIGURATION

• P

= 30 W with 11 dB gain @ 2000 MHz

OUT

• ESD PROTECTION

• IS-97 CDMA PERFORMANCES

PowerSO-10RF

(straight lead)

OUT

= 4.5 W

EFF = 17 %

ORDER CODE

BRANDING

LET20030S

DESCRIPTION

The LET20030S is a common source N-Channel,

enhancement-mode lateral Field-Effect RF power

transistor. It is designed for high gain, broad band

commercial and industrial applications. It operates

at 26 V in common source mode at frequencies up

to 2 GHz. LET20030S boasts the excellent gain,

linearity and reliability of ST’s latest LDMOS

technology mounted in the first true SMD plastic RF

power package, PowerSO-10RF. LET20030S’s

superior linearity performance makes it an ideal

solution for base station applications.

PIN CONNECTION

SOURCE

GATE

DRAIN

The PowerSO-10 plastic package, designed to offer

high reliability, is the first ST JEDEC approved, high

power SMD package. It has been specially

optimized for RF needs and offers excellent RF

performances and ease of assembly.

Mounting recommendations are available in

www.st.com/rf/ (look for application note AN1294)

ABSOLUTE MAXIMUM RATINGS (T

= 25 ^°C)

CASE

Symbol

Parameter

Value

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current

(BR)DSS

-0.5 to +15

TBD

Power Dissipation

140

°C

DISS

Max. Operating Junction Temperature

Storage Temperature

165

-65 to +175

STG

THERMAL DATA

th(j-c)

Junction -Case Thermal Resistance

1.0

°C/W

February, 27 2003

1/4

12 3 4

中文翻译

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LET21004	STMICROELECTRONICS	获取价格	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET21008	STMICROELECTRONICS	获取价格	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET21030C	STMICROELECTRONICS	获取价格	RF POWER TRANSISTORS Ldmos Enhanced Technology
LET8180	STMICROELECTRONICS	获取价格	RF POWER TRANSISTORS Ldmos Enhanced Technology
LET9002	STMICROELECTRONICS	获取价格	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET9006	STMICROELECTRONICS	获取价格	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET9045	STMICROELECTRONICS	获取价格	45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package
LET9045S	STMICROELECTRONICS	获取价格	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
LET9045STR	STMICROELECTRONICS	获取价格	45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package
LET9045TR	STMICROELECTRONICS	获取价格	45W 28V HF to 2GHz LDMOS TRANSISTOR in PSO-10RF plastic package

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