Datasheet > LESDA6V8AW5T1G

LESDA6V8AW5T1G

更新时间： 2024-11-18 05:41:47

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
6页	517K
描述
Low Capacitance Q uad Array for ESD Protection

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

LESDA6V8AW5T1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	R-PDSO-G5	Reach Compliance Code：	unknown
ECCN代码：	EAR99	HTS代码：	8541.10.00.50
风险等级：	5.78	最大击穿电压：	7.1 V
最小击穿电压：	6.4 V	击穿电压标称值：	6.8 V
最大钳位电压：	13 V	配置：	COMMON ANODE, 4 ELEMENTS
二极管元件材料：	SILICON	二极管类型：	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 代码：	R-PDSO-G5	最大非重复峰值反向功率耗散：	20 W
元件数量：	4	端子数量：	5
最高工作温度：	125 °C	最低工作温度：	-40 °C
封装主体材料：	PLASTIC/EPOXY	封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE	极性：	UNIDIRECTIONAL
最大功率耗散：	0.2 W	最大重复峰值反向电压：	5 V
子类别：	Transient Suppressors	表面贴装：	YES
技术：	AVALANCHE	端子形式：	GULL WING
端子位置：	DUAL	Base Number Matches：	1

LESDA6V8AW5T1G 数据手册

LESHAN RADIO COMPANY, LTD.

Low Capacitance Quad Array for ESD Protection

General Description

This integrated transient voltage suppressor device (TVS) is

designed for applications requiring transient overvoltage protection. It

is intended for use in sensitive equipment such as computers, printers,

business machines, communication systems, medical equipment, and

other applications. Its integrated design provides very effective and

reliable protection for four separate lines using only one package.

These devices are ideal for situations where board space is at a

premium.

LESDA6V8AW5T1G

Features

• ESD Protection: IEC61000−4−2: Level 4

MILSTD 883C − Method 3015−6: Class 3

• Four Separate Unidirectional Configurations for Protection

• Low Leakage Current < 1 mA

• Power Dissipation: 380 mW

SC−88A/SOT−353

• Small SC−88A SMT Package

• Low Capacitance

• Pb−Free Package is Available

Benefits

• Provides Protection for ESD Industry Standards: IEC 61000, HBM

• Protects the Line Against Transient Voltage Conditions in Either

Direction

• Minimize Power Consumption of the System

• Minimize PCB Board Space

Typical Applications

• Instrumentation Equipment

• Serial and Parallel Ports

ORDERING INFORMATION

Device

Package

Shipping

• Microprocessor Based Equipment

• Notebooks, Desktops, Servers

• Cellular and Portable Equipment

LESDA6V8AW5T1G SC-88A 3000/Tape & Reel

1/4

12 3 4 5 6

中文翻译

下载PDF

与LESDA6V8AW5T1G相关器件

型号	品牌	获取价格	描述	数据表
LESDA6V8AW5T1G_11	LRC	获取价格	Low Capacitance Q uad Array for ESD Protection
LESDA6V8V5T1G	LRC	获取价格	Quad Array for ESD Protection
LESDAXXXLT1G	LRC	获取价格	Dual transil array for ESD protection
LESM0103R5P1FV0E	CHEMI-CON	获取价格	Low DC resistance since lead wire only passes through the core. The Iron-based Amorphous C
LESM030020P7DV0E	CHEMI-CON	获取价格	Low DC resistance since lead wire only passes through the core. The Iron-based Amorphous C
LESM0301R5P2DV0E	CHEMI-CON	获取价格	Low DC resistance since lead wire only passes through the core. The Iron-based Amorphous C
LESM0400R9P5DV0E	CHEMI-CON	获取价格	Low DC resistance since lead wire only passes through the core. The Iron-based Amorphous C
LESM050010P1BV0E	CHEMI-CON	获取价格	Low DC resistance since lead wire only passes through the core. The Iron-based Amorphous C
LESM5F2JL32L00	CHEMI-CON	获取价格	General Purpose Inductor, 2.6uH, 8751,
LESM5F2JL32L0E	CHEMI-CON	获取价格	General Purpose Inductor, 2.6uH, 8751,

与LESDA6V8AW5T1G相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

17
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

12
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

42
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

37

产品中心

服务支持

精选活动

关于我们

帮助中心

LESDA6V8AW5T1G

LESDA6V8AW5T1G 技术参数

LESDA6V8AW5T1G 数据手册

与LESDA6V8AW5T1G相关器件

与LESDA6V8AW5T1G相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

LESDA6V8AW5T1G

LESDA6V8AW5T1G 技术参数

LESDA6V8AW5T1G 数据手册

与LESDA6V8AW5T1G相关器件

与LESDA6V8AW5T1G相关文章

您还可以找

您在本页遇到什么问题？