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HAIS50

更新时间： 2024-01-29 15:07:11
品牌 Logo 应用领域
莱姆 - LEM 传感器
页数 文件大小 规格书
3页 776K
描述
Current Transducer

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HAIS50 技术参数

是否Rohs认证：符合生命周期：Contact Manufacturer
包装说明：PACKAGE-6Reach Compliance Code：compliant
风险等级：5.77Is Samacsys：N
主体宽度：14 mm主体高度：29.5 mm
主体长度或直径：33 mm安装特点：THROUGH HOLE MOUNT
端子数量：6最高工作温度：85 °C
最低工作温度：-40 °C输出类型：ANALOG VOLTAGE
封装形状/形式：RECTANGULAR传感器/换能器类型：CURRENT SENSOR
最大供电电压：5.25 V最小供电电压：4.75 V
表面贴装：NOBase Number Matches：1

HAIS50 数据手册

 浏览型号HAIS50的Datasheet PDF文件第2页浏览型号HAIS50的Datasheet PDF文件第3页 
IPN = 50 .. 400 A  
Current Transducer HAIS 50..400-P  
and HAIS 50..100-TP  
For the electronic measurement of currents : DC, AC, pulsed, mixed,  
with a galvanic isolation between the primary circuit (high power)  
and the secondary circuit (electronic circuit).  
All Data are given with a RL = 10 kW  
Electrical data  
Features  
Primarynominal  
current rms  
IPN (A)  
Primary current,  
measuring range  
IPM (A)  
Type  
RoHS since  
date code  
· Hall effect measuring principle  
· Galvanic isolation between primary  
and secondary circuit  
· Isolation test voltage 2500V  
· Low power consumption  
· Single power supply +5V  
· Fixed offset & gain  
· Bus bar version available for 50A and  
100A ratings.  
· Insulated plastic case recognized  
according to UL94-V0.  
50  
100  
150  
200  
400  
± 150  
± 300  
± 450  
± 600  
± 600  
HAIS 50-P, HAIS 50-TP1)  
HAIS 100-P, HAIS 100-TP1)  
HAIS 150-P  
HAIS 200-P  
HAIS 400-P  
45231, 46272  
45231, 46012  
46172  
45231  
planned  
VOUT  
VREF  
Output voltage (Analog) @ IP  
IP = 0  
Reference voltage 2) - Output voltage  
VREF Output impedance  
VREF Load impedance  
Load resistance  
Output internal resistance  
Capacitive loading  
VREF ±(0.625·IP/IPN) V  
VREF ± 0.025  
2.5 ± 0.025  
V
V
typ. 200  
W
³ 200  
³ 2  
< 10  
< 1  
5
kW  
kW  
W
µF  
V
RL  
ROUT  
CL  
VC  
IC  
Advantages  
Supply voltage (± 5 %)  
Current consumption @ VC = 5 V  
· Small size and space saving  
· Only one design for wide current  
ratings range  
22  
mA  
Accuracy - Dynamic performance data  
· High immunity to external  
interference.  
· VREF. IN/OUT  
X
e
Accuracy 3) @ IPN , TA = 25°C  
Linearity error 0 .. 3 x IPN  
£ ± 1  
% of IPN  
% of IPN  
mV/K  
%/K  
mV/K  
£ ± 0.5  
£ ± 0.3  
£ ± 0.01  
£ ± 0.2  
L
TCVOE  
TCVREF  
Temperature coefficient of VOE @ IP = 0  
Temperature coefficient of VREF  
Applications  
TCVOUT /VREF Temperature coefficient of VOUT / VREF @ IP = 0  
· AC variable speed drives  
· Static converters for DC motor drives  
· Battery supplied applications  
· Uninterruptible Power Supplies  
(UPS)  
· Switched Mode Power Supplies  
(SMPS)  
· Power supplies for welding  
applications.  
TCVOUT  
VOM  
Temperature coefficient of VOUT  
Magnetic offset voltage@ IP = 0,  
after an overload of 3 x IPN DC  
Reaction time @ 10 % of IPN  
Response time to 90 % of IPN step  
di/dt accurately followed  
Output voltage noise (DC ..10 kHz)  
(DC .. 1 MHz)  
Frequency bandwidth (-3 dB) 4)  
£ ± 0.05% of reading/K  
< ± 0.4  
< 3  
% of IPN  
µs  
tra  
tr  
di/dt  
Vno  
< 5  
µs  
> 100  
< 15  
< 40  
A/µs  
mVpp  
mVpp  
kHz  
BW  
DC .. 50  
ApplicationDomain  
Notes : 1) -TP version is equipped with a primary bus bar.  
2)  
· Industrial  
It is possible to overdrive VREF with an external reference voltage  
between 2 - 2.8 V providing its ability to sink or source approximately  
2.5 mA.  
Excluding offset and hysteresis.  
3)  
4)  
Small signal only to avoid excessive heatings of the magnetic core.  
Page 1/3  
LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice.  
061018/6  
www.lem.com  
123

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