Current Transducer HAIS 50..400-P
and HAIS 50..100-TP
For the electronic measurement of currents: DC, AC, pulsed...,
with a galvanic isolation between the primary circuit (high power) and
the secondary circuit (electronic circuit).
IPN = 50 .. 400 A
All data are given with a RL = 10 kW
Electrical data
Primary nominal
current rms
Primary current
measuring range
IPM (A)
Type
RoHS since
date code
Features
I
PN (A)
50
± 150
± 300
± 450
± 600
HAIS 50-P, HAIS 50-TP1)
HAIS 100-P, HAIS 100-TP1) 45231, 46012
HAIS 150-P
HAIS 200-P
HAIS 400-P
45231, 46272
● Hall effect measuring principle
● Galvanic isolation between
primary and secondary circuit
● Isolation test voltage 2500V
● Low power consumption
● Single power supply +5V
● Fixed offset & gain
● Bus bar version available for 50A
and 100A ratings.
● Isolated plastic case recognized
according to UL94-V0.
100
150
200
400
46172
45231
47096
± 600
VOUT
GTH
VREF
Output voltage (Analog) @ IP
Theoretical sensitivity
Reference voltage2) - Output voltage
VOE ± (0.625· IP/IPN)V
0.625
V/IPN
V
2.5 ± 0.025
VREF Output impedance
typ. 200
≥ 200
W
VREF Load impedance
kW
kW
W
nF
V
RL
Load resistance
≥ 2
< 5
=4.7
5
ROUT
CL
VC
IC
Output internal resistance
Capacitive loading (± 20 %)
Supply voltage (± 5 %)3)
Advantages
● Small size and space saving
● Only one design for wide current
ratings range
● High immunity to external
interference.
Current consumption @ VC = 5 V
19
mA
Accuracy - Dynamic performance data
X
Accuracy 4) @ IPN , TA = 25°C
≤ ± 1
% of IPN
% of IPN
mV/K
%/K
ε
Linearity error 0 .. IPM
≤ ± 0.5
≤ ± 0.3
≤ ± 0.01
● VREF. IN/OUT
L
TCVOE Temperature coefficient of VOE
TCVREF Temperature coefficient of VREF, +25°C...+85°C
-40°C...+25°C
Applications
± 0.015
%/K
≤
● AC variable speed drives
● Static converters for DC motor
drives
● Battery supplied applications
● Uninterruptible Power Supplies
(UPS)
● Switched Mode Power Supplies
(SMPS)
● Power supplies for welding
applications.
TCVOE/VREFTemperature coefficient of VOE / VREF
TCG Temperature coefficient of G
≤ ± 0.2
mV/K
≤ ± 0.05% of reading/K
VOE
VOM
Electrical offset voltage@ IP = 0, TA = 25°C
Magnetic offset voltage@ IP = 0,
VREF ±0.025
V
after an overload of IPM
HAIS 50-(T)P
HAIS 100-(T)P..400-P < ± 0.4
< 3
< ± 0.5
% of IPN
% of IPN
µs
tra
tr
Reaction time @ 10 % of IPN
Response time to 90 % of IPN step
< 5
> 100
< 15
µs
A/µs
di/dt di/dt accurately followed
Vno
Output voltage noise
(DC ..10 kHz)
(DC .. 1 MHz)
mVpp
mVpp
kHz
< 40
Application domain
BW
Frequency bandwidth (- 3 dB)5)
DC .. 50
● Industrial
Notes: 1)-TP version is equipped with a primary bus bar.
2) It is possible to overdrive VREF with an external reference voltage
between 1.5 - 2.8 V providing its ability to sink or source approximately 5 mA.
3) Maximum supply voltage (not operating) < 6.5 V
4) Excluding Offset and Magnetic offset voltage.
5) Small signal only to avoid excessive heatings of the magnetic core.
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LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice.
100507/11
www.lem.com