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HAIS50-TP PDF预览

HAIS50-TP

更新时间: 2022-02-26 14:04:59
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莱姆 - LEM /
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3页 592K
描述
Current Transducer

HAIS50-TP 数据手册

 浏览型号HAIS50-TP的Datasheet PDF文件第2页浏览型号HAIS50-TP的Datasheet PDF文件第3页 
Current Transducer HAIS 50..400-P  
and HAIS 50..100-TP  
For the electronic measurement of currents: DC, AC, pulsed...,  
with a galvanic isolation between the primary circuit (high power) and  
the secondary circuit (electronic circuit).  
IPN = 50 .. 400 A  
All data are given with a RL = 10 kW  
Electrical data  
Primary nominal  
current rms  
Primary current  
measuring range  
IPM (A)  
Type  
RoHS since  
date code  
Features  
I
PN (A)  
50  
± 150  
± 300  
± 450  
± 600  
HAIS 50-P, HAIS 50-TP1)  
HAIS 100-P, HAIS 100-TP1) 45231, 46012  
HAIS 150-P  
HAIS 200-P  
HAIS 400-P  
45231, 46272  
Hall effect measuring principle  
Galvanic isolation between  
primary and secondary circuit  
Isolation test voltage 2500V  
Low power consumption  
Single power supply +5V  
Fixed offset & gain  
Bus bar version available for 50A  
and 100A ratings.  
● Isolated plastic case recognized  
according to UL94-V0.  
100  
150  
200  
400  
46172  
45231  
47096  
± 600  
VOUT  
GTH  
VREF  
Output voltage (Analog) @ IP  
Theoretical sensitivity  
Reference voltage2) - Output voltage  
VOE ± (0.625· IP/IPN)V  
0.625  
V/IPN  
V
2.5 ± 0.025  
VREF Output impedance  
typ. 200  
≥ 200  
W
VREF Load impedance  
kW  
kW  
W
nF  
V
RL  
Load resistance  
≥ 2  
< 5  
=4.7  
5
ROUT  
CL  
VC  
IC  
Output internal resistance  
Capacitive loading (± 20 %)  
Supply voltage (± 5 %)3)  
Advantages  
● Small size and space saving  
Only one design for wide current  
ratings range  
High immunity to external  
interference.  
Current consumption @ VC = 5 V  
19  
mA  
Accuracy - Dynamic performance data  
X
Accuracy 4) @ IPN , TA = 25°C  
± 1  
% of IPN  
% of IPN  
mV/K  
%/K  
ε
Linearity error 0 .. IPM  
≤ ± 0.5  
≤ ± 0.3  
± 0.01  
VREF. IN/OUT  
L
TCVOE Temperature coefficient of VOE  
TCVREF Temperature coefficient of VREF, +25°C...+85°C  
-40°C...+25°C  
Applications  
± 0.015  
%/K  
AC variable speed drives  
Static converters for DC motor  
drives  
Battery supplied applications  
Uninterruptible Power Supplies  
(UPS)  
Switched Mode Power Supplies  
(SMPS)  
Power supplies for welding  
applications.  
TCVOE/VREFTemperature coefficient of VOE / VREF  
TCG Temperature coefficient of G  
≤ ± 0.2  
mV/K  
≤ ± 0.05% of reading/K  
VOE  
VOM  
Electrical offset voltage@ IP = 0, TA = 25°C  
Magnetic offset voltage@ IP = 0,  
VREF ±0.025  
V
after an overload of IPM  
HAIS 50-(T)P  
HAIS 100-(T)P..400-P < ± 0.4  
< 3  
< ± 0.5  
% of IPN  
% of IPN  
µs  
tra  
tr  
Reaction time @ 10 % of IPN  
Response time to 90 % of IPN step  
< 5  
> 100  
< 15  
µs  
A/µs  
di/dt di/dt accurately followed  
Vno  
Output voltage noise  
(DC ..10 kHz)  
(DC .. 1 MHz)  
mVpp  
mVpp  
kHz  
< 40  
Application domain  
BW  
Frequency bandwidth (- 3 dB)5)  
DC .. 50  
Industrial  
Notes: 1)-TP version is equipped with a primary bus bar.  
2) It is possible to overdrive VREF with an external reference voltage  
between 1.5 - 2.8 V providing its ability to sink or source approximately 5 mA.  
3) Maximum supply voltage (not operating) < 6.5 V  
4) Excluding Offset and Magnetic offset voltage.  
5) Small signal only to avoid excessive heatings of the magnetic core.  
Page 1/3  
LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice.  
100507/11  
www.lem.com  

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