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CT0.4-P PDF预览

CT0.4-P

更新时间: 2024-01-27 07:50:26
品牌 Logo 应用领域
莱姆 - LEM 传感器
页数 文件大小 规格书
3页 868K
描述
Current Transducers

CT0.4-P 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Contact Manufacturer零件包装代码:MODULE
包装说明:ROHS COMPLIANT, PLASTIC, PACKAGE-4针数:4
Reach Compliance Code:compliantHTS代码:8542.39.00.01
风险等级:5.53模拟集成电路 - 其他类型:ANALOG CIRCUIT
JESD-30 代码:R-PSMA-P4长度:30 mm
负电源电压最大值(Vsup):-15.75 V负电源电压最小值(Vsup):-14.25 V
标称负供电电压 (Vsup):-15 V功能数量:1
端子数量:4最高工作温度:85 °C
最低工作温度:-20 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:MICROELECTRONIC ASSEMBLY
峰值回流温度(摄氏度):NOT SPECIFIED座面最大高度:31 mm
最大供电电压 (Vsup):15.75 V最小供电电压 (Vsup):14.25 V
标称供电电压 (Vsup):15 V表面贴装:NO
温度等级:OTHER端子形式:PIN/PEG
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:20 mmBase Number Matches:1

CT0.4-P 数据手册

 浏览型号CT0.4-P的Datasheet PDF文件第2页浏览型号CT0.4-P的Datasheet PDF文件第3页 
IPN = ± 100..400 mA  
VOUT = ± 5 V  
Current Transducers CT 0.1 .. 0.4-P  
For the electronic measurement of small currents: AC,DC, mixed,  
with a galvanic isolation between the primary circuit and the  
secondary circuit.  
Electrical data  
Primarynominal  
current rms  
IPN (mA)  
Primary current,  
measuring range  
IPM (mA)  
Type  
RoHS since  
date code  
Features  
100  
200  
400  
± 180  
± 360  
± 720  
CT 0.1-P  
CT 0.2-P  
CT 0.4-P  
46129  
46054  
46234  
· DC & AC earth leakage current  
transducer using a flux-gate  
principle  
VC  
I C  
RIS  
VOUT  
ROUT  
RL  
Supply voltage (± 5 %)  
Current consumption  
Isolation resistance @ 500 VDC  
Output voltage (Analog) @ ± IPN, RL= 10kW TA=25°C  
Output internal resistance  
Load resistance  
Capacitive loading  
± 15  
V
mA  
MW  
V
W
kW  
nF  
· PCBmounting  
· ±15V power supply  
± 35  
> 500  
± 5  
< 51  
³ 10  
£ 5  
· ±5V output @ IPN  
· Insulated plastic case recognized  
according to UL94-V0.  
,
CL  
Advantages  
Accuracy-Dynamic performance data  
· Small size  
X
Accuracy (excluding offset) @ IPN, TA = 25°C, RL = 10kW < ± 1  
%of IPN  
· Bandwidth : DC .. up to 18kHz  
· Response time better than 60 ms  
· Costeffective,compact  
alternative to classical RCDs  
(ResidualCurrentDevice)  
e
Linearity error (0 .. ± IPN)  
< ± 0.5 %of IPN  
< ± 0.05 %/K  
L
TCVOUT  
VOE  
Temperature coefficient of VOUT (of reading)  
Eletrical offset voltage @ IP = 0, TA = 25°C  
Hysteresis offset voltage  
< ± 50  
mV  
VOH  
@ IP = 0; after an excursion of 1 x IPN  
@ IP = 0; after an excursion of 100 x IPN  
< ± 2  
< ± 20  
mV  
mV  
TCVOE  
Temperature coefficient of VOE @ -20..+85°C CT 0.1-P < ± 4  
mV/K  
mV/K  
mV/K  
m s  
Applications  
CT 0.2-P < ± 3  
CT 0.4-P < ± 2  
· Earth leakage detection in  
transformerlesssolarinverters  
· 1st human contact protection of  
PV arrays  
· Failure detection in power sources  
· Symmetrical fault detection  
(e.g.aftermotorinverter)  
tr  
Response time to80% of IPN step  
90% of IPN step  
£ 20  
£ 60  
m s  
BW  
Frequency bandwidth (- 3 dB)  
CT 0.1-P DC .. 7000 Hz  
CT 0.2-P DC .. 11000 Hz  
CT 0.4-P DC .. 18000 Hz  
· Current leakage detection in  
stacked DC sources  
· Single phase or three phase  
differentialcurrentmeasurementup  
to ±30A per wire (DC or AC)  
General data  
TA  
TS  
Ambient operating temperature  
Ambient storage temperature  
Creepage distance  
Clearance distance  
Comparative tracking index (Group IIIa)  
Mass  
- 20 .. + 85 °C  
- 25 .. + 85 °C  
dCp  
dCl  
CTI  
m
> 5.5  
> 5.5  
> 220  
25  
m m  
m m  
g
ApplicationDomain  
Standards  
EN 50178: 1997  
· Industrial  
copyright protected  
Page 1/3  
LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice.  
061017/9  
www.lem.com  

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