Datasheet > LED780-02AU

LED780-02AU

更新时间： 2024-01-12 15:49:19

品牌	Logo	应用领域
ROITHNER		/
页数	文件大小	规格书
1页	32K
描述
Infrared LED

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LED780-02AU 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
风险等级：	5.67	Base Number Matches：	1

LED780-02AU 数据手册

LED780-xxAU Infrared LED Lamp

This series of LED780-xxAU is a GaAlAs LED mounted on a lead frame and encapsulated

in various types of epoxy lens which offer different design settings.

On forward bias, it emits a high power radiation of typical 18 mW with a peak wavelngth at 780 nm.

1) Specifications

(1) Chip material

AlGaAs

(2) Peak wavelength 780 nm

(3) Package

(4) Lead frame

Clear epoxy resin

Soldered

2) Absolute Maximum Ratings

Item

Symbol Maximum Rated Value Unit

Ambient Temperature

Ta=25°C

Power Dissipation

Forward Current

Pulse Forward Current

Reverse Voltage

190

100

Ta=25°C

IFP

500

Operating Temperature

Storage Temperature

Soldering Temperature

TOPR

TSTG

TSOL

-30 ~ +85

-30 ~ +100

260

°C

Ta=25°C

3) Electro-Optical Characteristics [Ta=25°C]

Item

Forward Voltage

Reverse Current

Total Radiated Power

Peak Wavelength

Half Width

Symbol Condition Minimum

Typical

1.75

Maximum

1.95

Unit

IF=50mA

VR=5V

l P

IF=50mA

13.0

18.0

780

Rise Time

Fall Time

4) Characteristics of Brightness [Ta=25°C]

Viewing

Half Angle

Radiant Intensity IF=50mA unit: mW/sr

Outer Dimension

Type

Minimum

Typical

Maximum Dimension Figure

LED780-01AU

LED780-02AU

LED780-03AU

LED780-04AU

LED780-05AU

LED780-06AU

±10°

±5°

±15°

±20°

±40°

100

f 5

±6°

110

±25°(Long)

±15°(Short)

±15°

f 5

Oval

f 3

LED780-09AU

LED780-33AU

LED780-36AU

±30°

f 3

‡

Radiant Intensity is measured by Tektronix J-16.

Total Radiated Power is measured by Photodyne #500.

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