Datasheet > LDTD143TLT1G_15

LDTD143TLT1G_15

更新时间： 2024-10-29 01:13:23

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	333K
描述
Bias Resistor Transistor

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LDTD143TLT1G_15 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

LDTD143TLT1G

S-LDTD143TLT1G

Applications

•

Inverter, Interface, Driver

• Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

SOT-23

3) Only the on/off conditions need to be set for operation,

making the device design easy.

•

We declare that the material of product compliance with

RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

COLLECTOR

zAbsolute maximum ratings (Ta=25°C)

BASE

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

Unit

EMITTER

VCBO

VCEO

EBO

500

Collector power dissipation

Junction temperature

Storage temperature

200

150

Tstg

−55 to +150

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

LDTD143TLT1G

4.7

3000/Tape & Reel

10000/Tape & Reel

S-LDTD143TLT1G

LDTD143TLT3G

S-LDTD143TLT3G

4.7

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

50µA

1mA

BV^CBO

BV^CEO

BV^EBO

−

50µA

−

=50V

CBO

EBO

CE(sat)

−

0.5

0.3

600

6.11

−

µA

Emitter cutoff current

=4V

−

Collector-emitter saturation voltage

DC current transfer ratio

=50mA/2.5mA

−

5V, I 50mA

100

3.29

−

250

4.7

200

−

Input resistance

−

kΩ

MHz

Transition frequency

=10V, I

−50mA, f

=100MHz

∗

Characteristics of built-in transistor

∗

Rev.O 1/3

12 3

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