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LDTD143TLT1G PDF预览

LDTD143TLT1G

更新时间： 2024-10-29 01:14:03
品牌 Logo 应用领域
乐山 - LRC 晶体管
页数 文件大小 规格书
3页 333K
描述
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

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中文翻译

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LDTD143TLT1G 技术参数

是否Rohs认证： 符合生命周期：Contact Manufacturer
包装说明：,Reach Compliance Code：unknown
风险等级：5.8最大集电极电流 (IC)：0.5 A
最小直流电流增益 (hFE)：100元件数量：1
极性/信道类型：NPN最大功率耗散 (Abs)：0.2 W
子类别：BIP General Purpose Small Signal表面贴装：YES
晶体管元件材料：SILICONBase Number Matches：1

LDTD143TLT1G 数据手册

 浏览型号LDTD143TLT1G的Datasheet PDF文件第2页浏览型号LDTD143TLT1G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
LDTD143TLT1G  
S-LDTD143TLT1G  
Applications  
•
Inverter, Interface, Driver  
• Features  
3
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
1
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
2
SOT-23  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
•
•
We declare that the material of product compliance with  
RoHS requirements.  
S- Prefix for Automotive and Other Applications Requiring Unique Site  
3
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  
R1  
COLLECTOR  
1
zAbsolute maximum ratings (Ta=25°C)  
BASE  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
Unit  
V
2
EMITTER  
VCBO  
VCEO  
V
EBO  
50  
40  
5
V
V
I
C
500  
mA  
mW  
C
Collector power dissipation  
Junction temperature  
Storage temperature  
P
C
200  
Tj  
150  
Tstg  
−55 to +150  
C
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
LDTD143TLT1G  
_
E2  
4.7  
3000/Tape & Reel  
10000/Tape & Reel  
S-LDTD143TLT1G  
_
LDTD143TLT3G  
S-LDTD143TLT3G  
E2  
4.7  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min. Typ. Max. Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
I
C
=
50µA  
1mA  
BVCBO  
BVCEO  
BVEBO  
50  
40  
5
−
−
−
−
V
V
I
C
=
I
E
=
50µA  
−
−
V
V
CB  
=50V  
I
CBO  
EBO  
CE(sat)  
FE  
−
−
0.5  
0.5  
0.3  
600  
6.11  
−
µA  
µA  
V
Emitter cutoff current  
V
EB  
=4V  
I
−
−
Collector-emitter saturation voltage  
DC current transfer ratio  
I
C
/I  
B
=50mA/2.5mA  
V
−
−
V
CE  
=
5V, I 50mA  
C
=
h
100  
3.29  
−
250  
4.7  
200  
−
Input resistance  
−
R
1
kΩ  
MHz  
Transition frequency  
V
CE  
=10V, I  
E=  
−50mA, f  
=100MHz  
fT  
∗
Characteristics of built-in transistor  
∗
Rev.O 1/3  
123

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