Datasheet > LDTD143ELT3G

LDTD143ELT3G

更新时间： 2024-10-29 01:14:03

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	349K
描述
NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

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LDTD143ELT3G 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

LDTD143ELT1G

S-LDTD143ELT1G

Applications

•

Inverter, Interface, Driver

• Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

SOT-23

3) Only the on/off conditions need to be set for operation,

making the device design easy.

•

We declare that the material of product compliance with

RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique Site

COLLECTOR

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable

BASE

zAbsolute maximum ratings (Ta=25°C)

Limits

Parameter

Symbol

Unit

EMITTER

Supply voltage

−10 to +30

500

Input voltage

Output current

°C

Power dissipation

Junction temperature

Storage temperature

200

Tstg

150

−55 to +150

°C

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

LDTD143ELT1G

4.7

3000/Tape & Reel

10000/Tape & Reel

S-LDTD143ELT1G

LDTD143ELT3G

S-LDTD143ELT3G

4.7

zElectrical characteristics (Ta=25°C)

Parameter

Input voltage

Symbol Min.

Typ.

Max.

0.5

−

Unit

Conditions

I (off)

I (on)

−

^CC=5V, I

=0.3V, I

/ I =50mA / 2.5mA

=5V

^CC=50V, V

=5V, I =50mA

=100µA

=20mA

Output voltage

Input current

O (on)

−

0.1

−

0.3

1.8

0.5

−

µA

−

Output current

DC current gain

Input resistance

Resistance ratio

O (off)

−

I=0V

3.29

0.8

−

4.7

6.11

1.2

−

kΩ

−

/ R

2 1

Transition frequency

∗

200

MHz

^CE=10V, IE= −50mA, f=100MHz

Characteristics of built-in transistor

∗

Rev.O 1/3

12 3

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