Datasheet > LDTD123ELT1G

LDTD123ELT1G

更新时间： 2024-10-28 03:50:47

品牌	Logo	应用领域
乐山 - LRC		晶体数字晶体管
页数	文件大小	规格书
6页	390K
描述
Digital transistors

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中文翻译

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技术参数
数据手册

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LDTD123ELT1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.78	最大集电极电流 (IC)：	0.5 A
最小直流电流增益 (hFE)：	39	元件数量：	1
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

LDTD123ELT1G 数据手册

LESHAN RADIO COMPANY, LTD.

Digital transistors

_●Features

1)Built-in bias resistors enable the

configuration of an inverter circuit

without connecting external input

resistors (see equivalent circuit).

2)The bias resistors consist of thin-

film resistors with complete isola-

tion to allow negative biasing of the

LDTD123ELT1G

input. They also have the advan-

tage of almost completely eliminat-

ing parasitic effects.

SOT–23

3)Only the on/off conditions need to

be set for operation, making device

design easy.

4)We declare that the material of product

compliance with

oRSHrequirements.

●

Structure

NPN digital transistor

(Built-in resistor type)

Driver Marking

LDTD123ELT1G= F22

●

Equivalent circuit

Ordering Information

Device

Marking

F22

Shipping

3000/Tape&Reel

LDTD123ELT1G

LDTD123ELT3G

10000/Tape&Reel

F22

1/4

12 3 4 5 6

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