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LDTD114GLT1G_15 PDF预览

LDTD114GLT1G_15

更新时间： 2024-10-29 01:13:23
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
3页 338K
描述
Bias Resistor Transistor

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LDTD114GLT1G_15 数据手册

 浏览型号LDTD114GLT1G_15的Datasheet PDF文件第2页浏览型号LDTD114GLT1G_15的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
LDTD114GLT1G  
S-LDTD114GLT1G  
Applications  
•
Inverter, Interface, Driver  
• Features  
3
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
1
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
2
SOT-23  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
•
•
We declare that the material of product compliance with  
RoHS requirements.  
3
S- Prefix for Automotive and Other Applications Requiring Unique Site  
COLLECTOR  
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  
1
BASE  
R2  
zAbsolute maximum ratings (Ta=25°C)  
2
Symbol  
Limits  
Unit  
V
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
EMITTER  
VCBO  
VCEO  
VEBO  
50  
50  
5
V
V
I
C
500  
mA  
mW  
C
P
C
200  
Collector power dissipation  
Junction temperature  
Storage temperature  
Tj  
Tstg  
150  
−55 to+150  
C
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
LDTD114GLT1G  
_
E7  
3000/Tape & Reel  
10000/Tape & Reel  
10  
S-LDTD114GLT1G  
LDTD114GLT3G  
S-LDTD114GLT3G  
_
E7  
10  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
BVCBO  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
−
−
−
−
50µA  
50  
50  
5
−
−
−
V
V
I
I
I
C
=
1mA  
BVCEO  
C
=
BVEBO  
V
E
=
720µA  
I
CBO  
EBO  
CE(sat)  
−
300  
−
56  
7
0.5  
580  
0.3  
−
13  
−
µA  
µA  
V
V
V
CB  
=50V  
Emitter cutoff current  
−
−
−
I
EB  
=
4V  
Collector-emitter saturation voltage  
DC current transfer ratio  
C/I  
B=  
V
I
I
50mA / 2.5mA  
hFE  
−
kΩ  
MHz  
C=  
50mA , VCE 5V  
=
Emitter-base resistance  
R2  
−
10  
∗
Transition frequency  
∗ Characteristics of built-in transistor.  
−
fT  
200  
VCE=10V , IE=−50mA , f=100MHz  
Rev.O 1/3  
123

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