Datasheet > LDTD114ELT1

LDTD114ELT1

更新时间： 2024-10-28 11:37:31

品牌	Logo	应用领域
乐山 - LRC		晶体数字晶体管
页数	文件大小	规格书
3页	95K
描述
Digital transistors (built-in resistors)

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中文翻译

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技术参数
数据手册

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LDTD114ELT1 技术参数

是否Rohs认证：	不符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.88	最大集电极电流 (IC)：	0.5 A
最小直流电流增益 (hFE)：	56	JESD-609代码：	e0
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.2 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	端子面层：	Tin/Lead (Sn/Pb)
晶体管元件材料：	SILICON	Base Number Matches：	1

LDTD114ELT1 数据手册

LESHAN RADIO COMPANY, LTD.

Digital transistors (built-in resistors)

LDTD114ELT1

FFeatures

1)Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input resistors.

2)The bias resistors consist of thinfilm resistors with com-

plete isolation to allow negative biasing of the input. They

also have the advantage of almost completely eliminat-

ing parasitic effects.

3)Only the on/off conditions need to be set for operation,

making device design easy.

SOT– 23 (TO–236AB)

4)Pb-Free package is available.

PIN 3

COLLECTOR

(OUTPUT)

FDevice marking and ordering information

PIN 1

BASE

(INPUT)

Device

Marking

Shipping

LDTD114ELT1

PIN 2

EMITTER

(GROUND)

3000/Tape&Reel

LDTD114ELT1G(Pb-Free)

FAbsolute maximum ratings (Ta = 25_C)

Parameter

Supply voltage

Symbol

Unit

Limits

Vcc

VIN

-10~+40

500

Input voltage

Output current

Power disspation

Junction temperature

Storage temperature

200

150

Tstg

-55~+150

FElectrical characteristics (Ta = 25C)

LDTD114ELT1–1/3

12 3

中文翻译

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