Datasheet > LDTD113ELT1G_15

LDTD113ELT1G_15

更新时间： 2024-10-29 01:13:23

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	378K
描述
Bias Resistor Transistor

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LDTD113ELT1G_15 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

LDTD113ELT1G

S-LDTD113ELT1G

•

Applications

Inverter, Interface, Driver

• Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

SOT-23

3) Only the on/off conditions need to be set for operation,

making the device design easy.

•

We declare that the material of product compliance with

RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

COLLECTOR

zAbsolute maximum ratings (Ta=25°C)

BASE

Limits

Parameter

Symbol

Unit

EMITTER

Supply voltage

−10 to +10

500

Input voltage

Output current

Power dissipation

Junction temperature

Storage temperature

200

150

Tstg

−55 to +150

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

LDTD113ELT1G

S-LDTD113ELT1G

3000/Tape & Reel

10000/Tape & Reel

LDTD113ELT3G

S-LDTD113ELT3G

zElectrical characteristics (Ta=25°C)

Parameter

Input voltage

Symbol Min.

Typ.

−

Max.

0.5

−

Unit

Conditions

I(off)

−

^CC=5V, I

=0.3V, I

/I =50mA/2.5mA

=5V

^CC=50V, V

=5V, I =50mA

=100µA

I(on)

−

=20mA

O(on)

0.1

−

0.3

7.2

0.5

−

µA

−

O I

Output voltage

Input current

O(off)

−

=0V

Output current

DC current gain

Input resistance

Resistance ratio

−

0.7

0.8

−

1.3

1.2

−

kΩ

−

∗

200

MHz

^CE=10V, I = −50mA, f=100MHz

Transition frequency

Characteristics of built-in transistor

∗

Rev.O 1/3

12 3

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