Datasheet > LDTC144TET1G

LDTC144TET1G

更新时间： 2024-10-29 01:14:03

品牌	Logo	应用领域
乐山 - LRC		晶体管
页数	文件大小	规格书
3页	327K
描述
Bias Resistor Transistor

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中文翻译

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技术参数
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LDTC144TET1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.73	最大集电极电流 (IC)：	0.1 A
最小直流电流增益 (hFE)：	100	元件数量：	1
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

LDTC144TET1G 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

LDTC144TET1G

S-LDTC144TET1G

Applications

•

Inverter, Interface, Driver

• Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

SC-89

3) Only the on/off conditions need to be set for operation,

making the device design easy.

•

We declare that the material of product compliance with

RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique Site

COLLECTOR

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

BASE

zAbsolute maximum ratings (Ta=25°C)

Limits

Unit

Parameter

Symbol

EMITTER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

VCBO

VCEO

VEBO

100

°C

Collector power dissipation

Junction temperature

Storage temperature

200

150

Tstg

−55 to +150

°C

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

LDTC144TET1G

S-LDTC144TET1G

3000/Tape & Reel

10000/Tape & Reel

LDTC144TET3G

S-LDTC144TET3G

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage

BV^CBO

−

0.5

0.3

10µA

2.0mA

50µA

Collector-emitter breakdown voltage BV^CEO

Emitter-base breakdown voltage

Collector cutoff current

BV^EBO

CBO

−

µA

VCB

50V

Emitter cutoff current

IEBO

=4V

Collector-emitter saturation voltage

DC current transfer ratio

Input resistance

VCE(sat)

IC/I

B=5mA/0.5mA

hFE

100 250 600

−

kΩ

MHz

5V, I

1mA

32.9

61.1

−

Transition frequency

Characteristics of built-in transistor

∗

−

250

−

V^CE=10V, I = −5mA, f=100MHz

Rev.O 1/3

12 3

中文翻译

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与LDTC144TET1G相关器件

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LDTC144TET1G_15	LRC	获取价格	Bias Resistor Transistor
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LDTC144VET1G	LRC	获取价格	NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network
LDTC144VET1G_15	LRC	获取价格	Bias Resistor Transistor
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