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LDTC144GET1G_15 PDF预览

LDTC144GET1G_15

更新时间: 2024-10-29 01:13:23
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乐山 - LRC /
页数 文件大小 规格书
3页 339K
描述
ias Resistor Transistor

LDTC144GET1G_15 数据手册

 浏览型号LDTC144GET1G_15的Datasheet PDF文件第2页浏览型号LDTC144GET1G_15的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
LDTC144GET1G  
Applications  
Inverter, Interface, Driver  
3
Features  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
1
2
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
SC-89  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
3
We declare that the material of product compliance with  
RoHS requirements.  
R1  
R2  
COLLECTOR  
1
BASE  
zAbsolute maximum ratings (Ta=25°C)  
2
Parameter  
Collector-base voltage  
Symbol  
Limits  
Unit  
V
EMITTER  
50  
50  
V
CBO  
V
CEO  
V
EBO  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
V
5
V
I
C
100  
mA  
DTC144GE  
Collector  
150  
Power  
DTC144GUA / DTC144GKA  
200  
Pc  
mW  
dissipation  
DTC144GSA  
300  
Junction temperature  
Storage temperature  
Tj  
150  
C
C
Tstg  
55 to +150  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
_
L1  
47  
3000/Tape & Reel  
10000/Tape & Reel  
LDTC144GET1G  
LDTC144GET3G  
_
L1  
47  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
50  
50  
5
47  
250  
0.5  
130  
0.3  
61.1  
V
V
I
I
I
C
=50µA  
=1mA  
=160µA  
CB=50V  
EB=4V  
C
V
E
I
CBO  
EBO  
CE(sat)  
FE  
65  
68  
32.9  
µA  
µA  
V
V
V
I
Emitter cutoff current  
V
I
C
=10mA , I  
=5mA , VCE=5V  
B
=0.5mA  
Collector-emitter saturation voltage  
DC current transfer ratio  
h
kΩ  
MHz  
IC  
R
Emitter-base resistance  
f
T
V
CE=10V , I = −5mA , f=100MHz ∗  
E
Transition frequency  
Transition frequency of the device.  
1/3  

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