LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC144GET1G
Applications
•
Inverter, Interface, Driver
3
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
1
2
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
SC-89
3) Only the on/off conditions need to be set for operation,
making the device design easy.
3
•
We declare that the material of product compliance with
RoHS requirements.
R1
R2
COLLECTOR
1
BASE
zAbsolute maximum ratings (Ta=25°C)
2
Parameter
Collector-base voltage
Symbol
Limits
Unit
V
EMITTER
50
50
V
CBO
V
CEO
V
EBO
Collector-emitter voltage
Emitter-base voltage
Collector current
V
5
V
I
C
100
mA
DTC144GE
Collector
150
Power
DTC144GUA / DTC144GKA
200
Pc
mW
dissipation
DTC144GSA
300
Junction temperature
Storage temperature
Tj
150
C
C
Tstg
−55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
_
L1
47
3000/Tape & Reel
10000/Tape & Reel
LDTC144GET1G
LDTC144GET3G
_
L1
47
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
BVCBO
BVCEO
BVEBO
50
50
5
−
−
−
−
−
−
−
47
250
−
−
−
0.5
130
0.3
−
61.1
−
V
V
I
I
I
C
=50µA
=1mA
=160µA
CB=50V
EB=4V
C
V
E
I
CBO
EBO
CE(sat)
FE
−
65
−
68
32.9
−
µA
µA
V
V
V
I
Emitter cutoff current
V
I
C
=10mA , I
=5mA , VCE=5V
B
=0.5mA
Collector-emitter saturation voltage
DC current transfer ratio
h
−
kΩ
MHz
IC
R
−
Emitter-base resistance
f
T
V
CE=10V , I = −5mA , f=100MHz ∗
E
Transition frequency
Transition frequency of the device.
∗
1/3