LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
NPN Silicon Surface Mount Transistors
LDTC143EET1
3
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SC-89 package
which is designed for low power surface mount applications.
1
2
SC-89
PIN 3
COLLECTOR
(OUTPUT)
• Simplifies Circuit Design
• Reduces Board Space
PIN 1
R1
BASE
• Reduces Component Count
(INPUT)
R2
• The SC-89 package can be soldered using wave or reflow. The
modified gull-winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
PIN 2
EMITTER
(GROUND)
•
Pb-Free Package is Available.
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
V
CBO
CEO
V
50
Vdc
I
C
100
mAdc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation,
FR–4 Board (Note 1.) @ T = 25°C
Derate above 25°C
P
D
200
1.6
mW
mW/°C
A
Thermal Resistance, Junction to Ambient (Note 1.)
R
600
°C/W
θJA
Total Device Dissipation,
FR–4 Board (Note 2.) @ T = 25°C
Derate above 25°C
P
D
300
2.4
mW
mW/°C
A
Thermal Resistance, Junction to Ambient (Note 2.)
Junction and Storage Temperature Range
R
400
°C/W
°C
θJA
T , T
J stg
–55 to +150
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 × 1.0 Inch Pad
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LDTC143EET1
8J
3000/Tape&Reel
3000/Tape&Reel
8J
LDTC143EET1G
(Pb-Free)
LDTC143EET1-1/3