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LDTC143EET1 PDF预览

LDTC143EET1

更新时间: 2024-10-28 11:37:31
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
3页 62K
描述
Bias Resistor Transistors

LDTC143EET1 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.88Is Samacsys:N
最大集电极电流 (IC):0.1 A最小直流电流增益 (hFE):15
JESD-609代码:e0元件数量:1
极性/信道类型:NPN最大功率耗散 (Abs):0.3 W
子类别:BIP General Purpose Small Signal表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)晶体管元件材料:SILICON
Base Number Matches:1

LDTC143EET1 数据手册

 浏览型号LDTC143EET1的Datasheet PDF文件第2页浏览型号LDTC143EET1的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistors  
NPN Silicon Surface Mount Transistors  
LDTC143EET1  
3
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base-emitter  
resistor. The BRT eliminates these individual components by integrating  
them into a single device. The use of a BRT can reduce both system  
cost and board space. The device is housed in the SC-89 package  
which is designed for low power surface mount applications.  
1
2
SC-89  
PIN 3  
COLLECTOR  
(OUTPUT)  
• Simplifies Circuit Design  
• Reduces Board Space  
PIN 1  
R1  
BASE  
• Reduces Component Count  
(INPUT)  
R2  
• The SC-89 package can be soldered using wave or reflow. The  
modified gull-winged leads absorb thermal stress during soldering  
eliminating the possibility of damage to the die.  
PIN 2  
EMITTER  
(GROUND)  
Pb-Free Package is Available.  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
CBO  
CEO  
V
50  
Vdc  
I
C
100  
mAdc  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation,  
FR–4 Board (Note 1.) @ T = 25°C  
Derate above 25°C  
P
D
200  
1.6  
mW  
mW/°C  
A
Thermal Resistance, Junction to Ambient (Note 1.)  
R
600  
°C/W  
θJA  
Total Device Dissipation,  
FR–4 Board (Note 2.) @ T = 25°C  
Derate above 25°C  
P
D
300  
2.4  
mW  
mW/°C  
A
Thermal Resistance, Junction to Ambient (Note 2.)  
Junction and Storage Temperature Range  
R
400  
°C/W  
°C  
θJA  
T , T  
J stg  
–55 to +150  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 × 1.0 Inch Pad  
DEVICE MARKING AND ORDERING INFORMATION  
Device  
Marking  
Shipping  
LDTC143EET1  
8J  
3000/Tape&Reel  
3000/Tape&Reel  
8J  
LDTC143EET1G  
(Pb-Free)  
LDTC143EET1-1/3  

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