Datasheet > LDTC125TET3G

LDTC125TET3G

更新时间： 2024-10-29 01:14:03

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	506K
描述
Bias Resistor Transistor

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LDTC125TET3G 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

LDTC125TET1G

Applications

•

Inverter, Interface, Driver

• Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

SC-89

3) Only the on/off conditions need to be set for operation,

making the device design easy.

COLLECTOR

•

We declare that the material of product compliance with

RoHS requirements.

BASE

zAbsolute maximum ratings (Ta=25°C)

EMITTER

Parameter

Collector-base voltage

Symbol

Limits

Unit

CBO

VCEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

100

Collector power dissipation

200

Junction temperature

Storage temperature

150

°C

Tstg

−55 to +150

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

200

3000/Tape & Reel

10000/Tape & Reel

LDTC125TET1G

LDTC125TET3G

200

zElectrical characteristics (Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

BV^CBO

Min.

Typ.

Max.

Unit

Conditions

−

1mA

50µA

BV^CEO

BV^EBO

50µA

CBO

EBO

CE(sat)

−

100

140

−

µA

=50V

0.5

0.3

600

260

−

Emitter cutoff current

=4V

Collector-emitter saturation voltage

DC current transfer ratio

−

0.5mA , I 0.05mA

250

200

250

−

kΩ

MHz

1mA , V^CE5V

−

Input resistance

VCE=10V , IE= −5mA , f=100MHz

Transition frequency

∗

Characteristics of built-in transistor

∗

1/3

12 3

中文翻译

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