Datasheet > LDTC124GET1G_15

LDTC124GET1G_15

更新时间： 2024-10-29 01:13:23

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	486K
描述
Bias Resistor Transistor

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数据手册

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LDTC124GET1G_15 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

LDTC124GET1G

Applications

•

Inverter, Interface, Driver

• Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

SC-89

3) Only the on/off conditions need to be set for operation,

making the device design easy.

•

We declare that the material of product compliance with

RoHS requirements.

COLLECTOR

BASE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

Unit

EMITTER

CBO

CEO

VEBO

100

Collector power dissipation

200

Junction temperature

Storage temperature

150

Tstg

−55 to +150

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

3000/Tape & Reel

10000/Tape & Reel

LDTC124GET1G

LDTC124GET3G

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

BV^CBO

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

−

250

−

0.5

260

0.3

−

28.6

−

50µA

1mA

CEO

BV^EBO

330µA

CBO

EBO

−

140

−

15.4

−

µA

50V

Emitter cutoff current

CE(sat)

10mA , I 0.5mA

Collector-emitter saturation voltage

DC current transfer ratio

−

kΩ

MHz

5mA , V^CE5V

−

Emitter-base resistance

VCE= 10V , IE= −5mA , f= 100MHz

∗

Transition frequency

Transition frequency of the device.

∗

1/3

12 3

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