Datasheet > LDTC115TET1G_15

LDTC115TET1G_15

更新时间： 2024-10-29 01:13:23

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
2页	417K
描述
Bias Resistor Transistor

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数据手册

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LDTC115TET1G_15 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

NPN Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

LDTC115TET1G

Applications

•

Inverter, Interface, Driver

• Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

SC-89

3) Only the on/off conditions need to be set for operation,

making the device design easy.

•

We declare that the material of product compliance with

RoHS requirements.

COLLECTOR

BASE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltag

Emitter-base voltage

Collector current

Symbol

Limits

Unit

EMITTER

CBO

VCEO

VEBO

100

°C

Collector power dissipation

Junction temperature

Storage temperature

200

150

Tstg

−55 to +150

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

3000/Tape & Reel

10000/Tape & Reel

LDTC115TET1G

LDTC115TET3G

100

zElectrical characteristics (Ta=25°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

BV^CBO

BV^CEO

BV^EBO

−

0.5

0.3

600

130

−

50µA

1mA

50µA

CBO

EBO

CE(sat)

−

100

−

µA

50V

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

−

=1mA/0.1mA

250

100

250

−

kΩ

MHz

=1mA, V^CE5V

Input resistance

−

Transition frequency

=10V, I

=−5mA, f

=100MHz

∗

Characteristics of built-in transistor.

∗

1/2

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