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LDTC114EET1G PDF预览

LDTC114EET1G

更新时间: 2024-10-29 01:21:31
品牌 Logo 应用领域
乐山 - LRC 晶体管
页数 文件大小 规格书
4页 416K
描述
Bias Resistor Transistor

LDTC114EET1G 技术参数

是否Rohs认证: 符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.67
最大集电极电流 (IC):0.1 A最小直流电流增益 (hFE):35
元件数量:1极性/信道类型:NPN
最大功率耗散 (Abs):0.3 W子类别:BIP General Purpose Small Signal
表面贴装:YES晶体管元件材料:SILICON
Base Number Matches:1

LDTC114EET1G 数据手册

 浏览型号LDTC114EET1G的Datasheet PDF文件第2页浏览型号LDTC114EET1G的Datasheet PDF文件第3页浏览型号LDTC114EET1G的Datasheet PDF文件第4页 
LDTC114EET1G  
S-LDTC114EET1G  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
1. FEATURES  
Simplifies circuit design  
Reduces board space and component count  
We declare that the material of product compliance with  
RoHS requirements and Halogen Free.  
S- prefix for automotive and other applications requiring  
unique site and control change requirements; AEC-Q101  
qualified and PPAP capable.  
SC89  
3 COLLECTOR  
R1  
1 BASE  
2. DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking R1(K) R2(K)  
Shipping  
R2  
LDTC114EET1G  
LDTC114EET3G  
8A  
8A  
10  
10  
10  
10  
3000/Tape&Reel  
10000/Tape&Reel  
2 EMITTER  
3. MAXIMUM RATINGS(Ta = 25ºC)  
Parameter  
Symbol  
VCEO  
VCBO  
IC  
Limits  
50  
Unit  
Vdc  
Collector–Emitter Voltage  
Collector–Base Voltage  
50  
Vdc  
Collector Current — Continuous  
100  
mAdc  
4. THERMAL CHARACTERISTICS  
Parameter  
Symbol  
Limits  
Unit  
Total Device Dissipation,  
FR−5 Board (Note 1) @ TA = 25ºC  
Derate above 25ºC  
PD  
200  
1.6  
mW  
mW/ºC  
ºC/W  
Thermal Resistance,  
RΘJA  
600  
Junction–to–Ambient(Note 1)  
Junction and Storage temperature  
1. FR–5 @ Minimum Pad.  
TJ,Tstg −55+150 ºC  
Leshan Radio Company, LTD.  
Rev.O Mar 2016  
1/4  

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