Datasheet > LDTC114EET1

LDTC114EET1

更新时间： 2024-10-28 03:50:47

品牌	Logo	应用领域
乐山 - LRC		晶体数字晶体管
页数	文件大小	规格书
3页	204K
描述
Digital transistors (built-in resistors)

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中文翻译

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技术参数
数据手册

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LDTC114EET1 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.79
Is Samacsys：	N	最大集电极电流 (IC)：	0.05 A
最小直流电流增益 (hFE)：	30	元件数量：	1
极性/信道类型：	NPN	最大功率耗散 (Abs)：	0.15 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

LDTC114EET1 数据手册

LESHAN RADIO COMPANY, LTD.

Digital transistors (built-in resistors)

LDTC114EET1

zFeatures

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow negative biasing of the

input. They also have the advantage of almost

completely eliminating parasitic effects.

SC-89

3) Only the on/off conditions need to be set for

operation, making device design easy.

OUT

GND

IN 1

zDevice marking

LDTC114EET1=8A

OUT

zAbsolute maximum ratings (Ta=25°C)

GND

Parameter

Symbol

Value

Unit

−10~+40

VCC

Supply voltage

Input voltage

VIN

Output current

C(Max.)

100

150

Power dissipation

°C

150

Junction temperature

Storage temperature

Tstg

−55~+150

°C

LDTC144EET1-1/3

12 3

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