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LDTC113ZET1G PDF预览

LDTC113ZET1G

更新时间: 2024-10-29 01:12:39
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
3页 278K
描述
Bias Resistor Transistor

LDTC113ZET1G 数据手册

 浏览型号LDTC113ZET1G的Datasheet PDF文件第2页浏览型号LDTC113ZET1G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
NPN Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
LDTC113ZET1G  
Applications  
S-LDTC113ZET1G  
Inverter, Interface, Driver  
Features  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
3
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
2
1
SC-89  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
We declare that the material of product compliance with  
RoHS requirements.  
S- Prefix for Automotive and Other Applications Requiring Unique Site  
3
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.  
R1  
R2  
COLLECTOR  
1
BASE  
zAbsolute maximum ratings (Ta=25°C)  
2
Limits  
Parameter  
Symbol  
Unit  
EMITTER  
LDTC113ZET1G  
50  
Supply voltage  
Input voltage  
V
CC  
IN  
V
V
V
5 to +10  
100  
I
O
mA  
Output current  
IC(Max.)  
100  
Power dissipation  
P
D
200  
mW  
°C  
Junction temperature  
Storage temperature  
Tj  
Tstg  
150  
55 to +150  
°C  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
LDTC113ZET1G  
N7  
1
10  
3000/Tape & Reel  
10000/Tape & Reel  
S-LDTC113ZET1G  
LDTC113ZET3G  
S-LDTC113ZET3G  
N7  
1
10  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol Min.  
Typ.  
Max.  
Unit  
V
Conditions  
=100µA  
=20mA  
=10mA/0.5mA  
=5V  
CC=50V, V  
=5V, I =5mA  
V
I(off)  
I(on)  
3
0.3  
V
V
CC=5V, I  
=0.3V, I  
/I  
O
Input voltage  
V
O
O
Output voltage  
Input current  
V
O(on)  
0.1  
0.3  
7.2  
0.5  
V
mA  
µA  
IO I  
I
I
V
V
V
I
Output current  
DC current gain  
Input resistance  
Resistance ratio  
I
O(off)  
I
=0V  
G
I
33  
0.7  
8
O
O
R
1
1
1.3  
12  
kΩ  
R
2
/R  
1
10  
250  
Transition frequency  
f
T
MHz  
V
CE=10V, I  
E= 5mA, f=100MHz  
Characteristics of built-in transistor  
Rev.O 1/3  

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