LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTC113ZET1G
Applications
•
S-LDTC113ZET1G
Inverter, Interface, Driver
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
3
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
2
1
SC-89
3) Only the on/off conditions need to be set for operation,
making the device design easy.
•
•
We declare that the material of product compliance with
RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site
3
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
R1
R2
COLLECTOR
1
BASE
zAbsolute maximum ratings (Ta=25°C)
2
Limits
Parameter
Symbol
Unit
EMITTER
LDTC113ZET1G
50
Supply voltage
Input voltage
V
CC
IN
V
V
V
−5 to +10
100
I
O
mA
Output current
IC(Max.)
100
Power dissipation
P
D
200
mW
°C
Junction temperature
Storage temperature
Tj
Tstg
150
−55 to +150
°C
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
LDTC113ZET1G
N7
1
10
3000/Tape & Reel
10000/Tape & Reel
S-LDTC113ZET1G
LDTC113ZET3G
S-LDTC113ZET3G
N7
1
10
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
Typ.
−
Max.
Unit
V
Conditions
=100µA
=20mA
=10mA/0.5mA
=5V
CC=50V, V
=5V, I =5mA
V
I(off)
I(on)
−
3
0.3
−
V
V
CC=5V, I
=0.3V, I
/I
O
Input voltage
V
−
O
O
Output voltage
Input current
V
O(on)
−
0.1
−
0.3
7.2
0.5
−
V
mA
µA
−
IO I
I
I
−
V
V
V
I
Output current
DC current gain
Input resistance
Resistance ratio
I
O(off)
−
−
I
=0V
G
I
33
0.7
8
−
O
O
R
1
1
1.3
12
−
kΩ
−
−
R
2
/R
1
10
250
−
Transition frequency
f
T
∗
−
MHz
V
CE=10V, I
E= −5mA, f=100MHz
∗ Characteristics of built-in transistor
Rev.O 1/3