Datasheet > LDTB123YLT3G

LDTB123YLT3G

更新时间： 2024-10-28 03:00:27

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LDTB123YLT3G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.5 A
最小直流电流增益 (hFE)：	56	元件数量：	1
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

LESHAN RADIO COMPANY, LTD.

Digital transistors (built-in resistors)

Pb-Free package is available

FFeatures

LDTB123YLT1G

1) Built-in bias resistors enable the

configuration of an inverter circuit

without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-

film resistors with complete isola-

tion to allow positive biasing of the

input. They also have the advan-

tage of almost completely eliminat-

ing parasitic effects.

SOT–23

3) Only the on/off conditions need to

be set for operation, making device

design easy.

FEquivalent circuit

4) We declare that the material of product

compliance with RoHS requirements.

FStructure

PNP digital transistor

(Built-in resistor type)

1/4

12 3 4 5 6

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