Datasheet > LDTB123TLT1G

LDTB123TLT1G

更新时间： 2024-10-29 01:12:39

品牌	Logo	应用领域
乐山 - LRC		晶体管
页数	文件大小	规格书
3页	349K
描述
Bias Resistor Transistor

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中文翻译

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技术参数
数据手册

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LDTB123TLT1G 技术参数

是否Rohs认证：	符合	生命周期：	Contact Manufacturer
包装说明：	,	Reach Compliance Code：	unknown
风险等级：	5.8	最大集电极电流 (IC)：	0.5 A
最小直流电流增益 (hFE)：	100	元件数量：	1
极性/信道类型：	PNP	最大功率耗散 (Abs)：	0.2 W
子类别：	BIP General Purpose Small Signal	表面贴装：	YES
晶体管元件材料：	SILICON	Base Number Matches：	1

LDTB123TLT1G 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

LDTB123TLT1G

S-LDTB123TLT1G

Applications

•

Inverter, Interface, Driver

• Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

SOT-23

3) Only the on / off conditions need to be set for operation,

making the device design easy.

•

We declare that the material of product compliance with

RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

COLLECTOR

BASE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Limits

−50

Unit

EMITTER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

CBO

VCEO

VEBO

−40

−5

−500

200

Collector power dissipation

Junction temperature

Storage temperature

150

Tstg

−55 to +150

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

LDTB123TLT1G

2.2

3000/Tape & Reel

10000/Tape & Reel

S-LDTB123TLT1G

LDTB123TLT3G

S-LDTB123TLT3G

2.2

zElectrical characteristics (Ta=25°C)

Rev.O 1/3

12 3

中文翻译

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