Datasheet > LDTB123ELT1G_15

LDTB123ELT1G_15

更新时间： 2024-10-29 01:15:27

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	313K
描述
Bias Resistor Transistor

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LDTB123ELT1G_15 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

LDTB123ELT1G

Applications

•

S-LDTB123ELT1G

Inverter, Interface, Driver

• Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

SOT-23

3) Only the on / off conditions need to be set for operation,

making the device design easy.

•

We declare that the material of product compliance with

RoHS requirements.

S- Prefix for Automotive and Other Applications Requiring Unique Site

COLLECTOR

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

BASE

zAbsolute maximum ratings (Ta=25°C)

Limits

Parameter

Symbol

Unit

EMITTER

Supply voltage

Input voltage

−50

−12 to +10

Output current

−500

Power dissipation

200

150

Junction temperature

Storage temperature

Tstg

−55 to +150

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

LDTB123ELT1G

2.2

3000/Tape & Reel

10000/Tape & Reel

S-LDTB123ELT1G

LDTB123ELT3G

S-LDTB123ELT3G

2.2

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

−

Max.

−0.5

−

Unit

Conditions

^CC= −5V, I = −100µA

= −0.3V, I = −20mA

/I = −50mA/−2.5mA

= −5V

^CC= −50V, V

I(off)

I(on)

−

−3

−

Input voltage

−

Output voltage

Input current

O(on)

−0.1

−

−0.3

−3.8

−0.5

µA

−

O I

−

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

IO(off)

−

=0V

1.54

0.8

−

= −5V, I

= −50mA

2.2

2.86

1.2

−

kΩ

−

∗

200

MHz

^CE= −10V, I

50mA, f

100MHz

Characteristics of built-in transistor

∗

Rev.O 1/3

12 3

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