Datasheet > LDTB113ELT3G

LDTB113ELT3G

更新时间： 2024-10-29 01:12:35

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	222K
描述
Bias Resistor Transistor

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LDTB113ELT3G 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

LDTB113ELT1G

S-LDTB113ELT1G

Applications

•

Inverter, Interface, Driver

• Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

SOT–23

3) Only the on/off conditions need to be set for operation,

making the device design easy.

•

We declare that the material of product compliance with

RoHS requirements.

S - Prefix for Automotive and Other Applications Requiring Unique Site

and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.

COLLECTOR

BASE

zAbsolute maximum ratings (Ta=25°C)

Parameter

Symbol

Unit

Limits

EMITTER

Supply voltage

−50

−10 to +10

−500

Input voltage

Output current

Power dissipation

Junction temperature

Storage temperature

200

Tstg

150

−55 to +150

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

LDTB113ELT1G

S-LDTB113ELT1G

3000/Tape & Reel

10000/Tape & Reel

LDTB113ELT3G

S-LDTB113ELT3G

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

=−100µA

=−20mA

=−50mA/−2.5mA

=−5V

^CC=−50V, V

I(off)

−

−3

−

−0.5

^CC=−5V, I

=−0.3V, I

Input voltage

I(on)

−

Output voltage

Input current

O(on)

−0.1 −0.3

−

−7.2

−0.5

−

µA

−

Output current

DC current gain

Input resistance

Resistance ratio

Transition frequency

O(off)

−

I=0V

0.7

0.8

−

=−5V, I

=−50mA

1.3

1.2

−

kΩ

−

∗

200

MHz

^CE=−10V, IE=50mA, f= 100MHz

∗

Characteristics of built-in transistor

Rev.O 1/3

12 3

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