LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTA144VET1G
Applications
•
Inverter, Interface, Driver
3
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
1
2
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
SC-89
3) Only the on/off conditions need to be set for operation,
making the device design easy.
3
•
We declare that the material of product compliance with
RoHS requirements.
R1
R2
COLLECTOR
1
BASE
zAbsolute maximum ratings (Ta=25°C)
2
Parameter
Supply voltage
Symbol
Limits
Unit
V
EMITTER
V
CC
−50
−40 to +15
Input voltage
V
I
V
I
O
−30
mA
Output current
I
C(Max.)
−100
200
Power dissipation
Pd
mW
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
L9
47
10
3000/Tape & Reel
8000/Tape & Reel
LDTA144VET1G
LDTA144VET3G
L9
47
10
zElectrical characteristics (Ta=25°C)
Parameter
Input voltage
Symbol
Min.
Typ.
Max.
Unit
V
Conditions
V
I(off)
I(on)
−
−6
−
−
−
−1
−
V
V
CC= −5V , IO= −100µA
V
O
= −0.3V , I
= −10mA , I
= −5V
CC= −50V , V
= −5mA , V
O
= −2mA
Output voltage
Input current
V
O(on)
−0.1
−
−0.3
−0.16
−0.5
−
V
mA
µA
−
I
O
I
= −0.5mA
I
I
−
V
V
I
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
IO(off)
−
−
I=0V
G
I
33
32.9
0.17
−
−
I
O
O= −5V
R
1
47
0.21
250
61.1
0.26
−
kΩ
−
−
−
R
/R
2 1
f
T
MHz
V
CE= −10V , IE=5mA , f=100MHz
Transition frequency of the device.
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