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LDTA144VET1G PDF预览

LDTA144VET1G

更新时间: 2024-10-29 01:12:35
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
3页 259K
描述
Bias Resistor Transistor

LDTA144VET1G 数据手册

 浏览型号LDTA144VET1G的Datasheet PDF文件第2页浏览型号LDTA144VET1G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
PNP Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
LDTA144VET1G  
Applications  
Inverter, Interface, Driver  
3
Features  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
1
2
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
SC-89  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
3
We declare that the material of product compliance with  
RoHS requirements.  
R1  
R2  
COLLECTOR  
1
BASE  
zAbsolute maximum ratings (Ta=25°C)  
2
Parameter  
Supply voltage  
Symbol  
Limits  
Unit  
V
EMITTER  
V
CC  
50  
40 to +15  
Input voltage  
V
I
V
I
O
30  
mA  
Output current  
I
C(Max.)  
100  
200  
Power dissipation  
Pd  
mW  
Junction temperature  
Storage temperature  
Tj  
150  
°C  
°C  
Tstg  
55 to +150  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
L9  
47  
10  
3000/Tape & Reel  
8000/Tape & Reel  
LDTA144VET1G  
LDTA144VET3G  
L9  
47  
10  
zElectrical characteristics (Ta=25°C)  
Parameter  
Input voltage  
Symbol  
Min.  
Typ.  
Max.  
Unit  
V
Conditions  
V
I(off)  
I(on)  
6  
1  
V
V
CC= 5V , IO= 100µA  
V
O
= 0.3V , I  
= 10mA , I  
= 5V  
CC= 50V , V  
= 5mA , V  
O
= 2mA  
Output voltage  
Input current  
V
O(on)  
0.1  
0.3  
0.16  
0.5  
V
mA  
µA  
I
O
I
= 0.5mA  
I
I
V
V
I
Output current  
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
IO(off)  
I=0V  
G
I
33  
32.9  
0.17  
I
O
O= 5V  
R
1
47  
0.21  
250  
61.1  
0.26  
kΩ  
R
/R  
2 1  
f
T
MHz  
V
CE= 10V , IE=5mA , f=100MHz  
Transition frequency of the device.  
1/3  

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