Datasheet > LDTA144TET1G_15

LDTA144TET1G_15

更新时间： 2024-10-29 01:15:27

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	285K
描述
Bias Resistor Transistor

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数据手册

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LDTA144TET1G_15 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

LDTA144TET1G

Applications

•

Inverter, Interface, Driver

• Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

SC-89

3) Only the on/off conditions need to be set for operation,

making the device design easy.

•

We declare that the material of product compliance with

RoHS requirements.

COLLECTOR

BASE

zAbsolute maximum ratings (Ta=25°C)

Limits

Parameter

Symbol

Unit

EMITTER

Collector-base voltage

−50

CBO

CEO

EBO

Collector-emitter voltage

Emitter-base voltage

Collector current

−5

−100

200

Collector power dissipation

Junction temperature

Storage temperature

°C

150

−55 to +150

Tstg

°C

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

3000/Tape & Reel

10000/Tape & Reel

LDTA144TET1G

LDTA144TET3G

zElectrical characteristics (Ta=25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol Min.

Typ.

−

Max.

−

Unit

Conditions

BV^CBO

BV^CEO

BV^EBO

−50

−5

−

−50µA

−

=−1mA

−

=−50µA

ICBO

EBO

−

−0.5

−0.3

600

61.1

−

µA

−50V

Emitter cutoff current

−

=−4V

Collector-emitter saturation voltage

DC current transfer ratio

CE(sat)

−

=−5mA/−0.5mA

100

32.9

−

250

−

−5V, I

C=−1mA

kΩ

MHz

−

Input resistance

∗

−10V, IE=5mA, f=100MHz

Transition frequency

∗ Characteristics of built-in transistor

1/3

12 3

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