Datasheet > LDTA144GET1G_15

LDTA144GET1G_15

更新时间： 2024-10-29 01:15:27

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	284K
描述
Bias Resistor Transistor

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中文翻译

获取价格

数据手册

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LDTA144GET1G_15 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

LDTA144GET1G

Applications

•

Inverter, Interface, Driver

• Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

SC-89

3) Only the on/off conditions need to be set for operation,

making the device design easy.

COLLECTOR

•

We declare that the material of product compliance with

RoHS requirements.

BASE

zAbsolute maximum ratings (Ta=25°C)

EMITTER

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

−50

−5

−100

200

Unit

VCBO

VCEO

VEBO

Collector power dissipation

Junction temperature

Storage temperature

150

−55 to +150

Tstg

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

3000/Tape & Reel

10000/Tape & Reel

LDTA144GET1G

LDTA144GET3G

zElectrical characteristics (T 25°C)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Symbol

Min.

Typ.

Max.

Conditions

Unit

BV^CBO

BV^CEO

BV^EBO

−50

−5

−

−65

−

32.9

−

250

−

= −50µA

= −1mA

= −160µA

^CB= −50V

^EB= −4V

CBO

EBO

CE(sat)

−0.5

−130

−0.3

−

61.1

−

µA

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

= −10mA , I = −0.5mA

−

kΩ

MHz

= −5mA , V^CE= −5V

Emitter-base resistance

−

^CE= −10V , I =5mA , f=100MHz

Transition frequency

∗

Transition frequency of the device.

1/3

12 3

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