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LDTA143ZM3T5G_15 PDF预览

LDTA143ZM3T5G_15

更新时间: 2024-10-29 01:03:15
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
11页 143K
描述
Bias Resistor Transistors

LDTA143ZM3T5G_15 数据手册

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LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistors  
PNP Silicon Surface Mount Transistors  
LDTA114EM3T5G  
Series  
With Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base-emitter  
resistor. The BRT eliminates these individual components by integrating  
them into a single device. The use of a BRT can reduce both system  
cost and board space. The device is housed in the SOT-723 package  
which is designed for low power surface mount applications.  
ƽSimplifies Circuit Design  
3
2
1
SOT-723  
ƽReduces Board Space  
ƽReduces Component Count  
PIN 3  
COLLECTOR  
PIN 1  
BASE  
ƽThe SOT-723 Package can be Soldered using Wave or Reflow.  
ƽAvailable in 4 mm, 8000 Unit Tape & Reel  
R
(OUTPUT)  
1
ƽ
compliance with  
We declare that the material of product  
(INPUT)  
R
2
RoHS requirements.  
PIN 2  
EMITTER  
(GROUND)  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
CBO  
CEO  
MARKING DIAGRAM  
V
50  
Vdc  
I
C
100  
mAdc  
3
THERMAL CHARACTERISTICS  
Characteristic  
XX M  
Symbol  
Max  
Unit  
Total Device Dissipation  
P
260 (Note 1)  
600 (Note 2)  
2.0 (Note 1)  
4.8 (Note 2)  
mW  
2
1
D
T = 25°C  
A
mW/°C  
°C/W  
°C  
Derate above 25°C  
xx = Specific Device Code  
M
= Date Code  
Thermal Resistance –  
Junction-to-Ambient  
R
480 (Note 1)  
205 (Note 2)  
θ
JA  
Junction and Storage  
Temperature Range  
T
–55 to +150  
J, Tstg  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 x 1.0 inch Pad  
1/11  

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