Datasheet > LDTA143XET1G_15

LDTA143XET1G_15

更新时间： 2024-10-29 01:15:27

品牌	Logo	应用领域
乐山 - LRC		/
页数	文件大小	规格书
3页	288K
描述
Bias Resistor Transistor

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中文翻译

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数据手册

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LDTA143XET1G_15 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistor

PNP Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

LDTA143XET1G

Applications

•

Inverter, Interface, Driver

• Features

1) Built-in bias resistors enable the configuration of an

inverter circuit without connecting external input

resistors (see equivalent circuit).

2) The bias resistors consist of thin-film resistors with

complete isolation to allow positive biasing of the input.

They also have the advantage of almost completely

eliminating parasitic effects.

SC-89

3) Only the on/off conditions need to be set for operation,

making the device design easy.

•

We declare that the material of product compliance with

RoHS requirements.

COLLECTOR

BASE

zAbsolute maximum ratings (Ta=25°C)

Limits

Parameter

Symbol

Unit

EMITTER

−50

−20 to +7

−100

Supply voltage

Input voltage

Output current

C(Max.)

−100

°C

Power dissipation

200

Junction temperature

Storage temperature

150

°C

Tstg

−55 to +150

DEVICE MARKING AND RESISTOR VALUES

Device

Marking

R1 (K)

R2 (K)

Shipping

P10

4.7

3000/Tape & Reel

10000/Tape & Reel

LDTA143XET1G

LDTA143XET3G

P10

4.7

zElectrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

−

Max.

Unit

Conditions

I(off)

I(on)

−

−2.5

−

−0.3

−

^CC=−5V, I

=−0.3V, I

/I =−10mA/−0.5mA

=−5V

^CC=−50V, V

=−100µA

Input voltage

−

=−20mA

Output voltage

Input current

O(on)

−0.1

−

−0.3

−1.8

−0.5

−

µA

−

O I

−

Output current

DC current gain

Input resistance

Resistance ratio

O(off)

−

=0V

3.29

1.7

−

=−5V, I

=−10mA

4.7

2.1

250

6.11

2.6

−

kΩ

−

2/R1

Transition frequency

∗

MHz

^CE=−10V, I =5mA, f=100MHz

Characteristics of built-in transistor

∗

1/3

12 3

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