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LDTA125TET1G_15 PDF预览

LDTA125TET1G_15

更新时间: 2024-10-29 01:15:27
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乐山 - LRC /
页数 文件大小 规格书
3页 281K
描述
Bias Resistor Transistor

LDTA125TET1G_15 数据手册

 浏览型号LDTA125TET1G_15的Datasheet PDF文件第2页浏览型号LDTA125TET1G_15的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
PNP Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
LDTA125TET1G  
Applications  
Inverter, Interface, Driver  
3
Features  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
1
2
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
SC-89  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
3
R1  
COLLECTOR  
1
We declare that the material of product compliance with  
RoHS requirements.  
BASE  
2
zAbsolute maximum ratings (Ta=25°C)  
EMITTER  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
50  
50  
5  
100  
200  
Unit  
V
V
CBO  
VCEO  
VEBO  
V
V
I
C
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
Pc  
Tj  
150  
Tstg  
55 to +150  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
O9  
200  
3000/Tape & Reel  
10000/Tape & Reel  
LDTA125TET1G  
LDTA125TET3G  
O9  
200  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
50  
50  
5  
100  
140  
Typ.  
Max.  
Unit  
Conditions  
BVCBO  
BVCEO  
BVEBO  
V
V
I
I
I
C
= −50µA  
= −1mA  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
C
V
E
= −50µA  
CB= −50V  
EB= −4V  
I
CBO  
EBO  
CE(sat)  
FE  
µA  
µA  
V
V
V
0.5  
0.5  
0.3  
600  
260  
Emitter cutoff current  
I
V
IC  
= −0.5mA , I = −0.05mA  
B
Collector-emitter saturation voltage  
DC current transfer ratio  
h
250  
200  
250  
kΩ  
MHz  
IC  
= −1mA , VCE= −5V  
R1  
Input resistance  
f
T
V
CE= −10V , I =5mA , f=100MHz  
E
Transition frequency  
Characteristics of built-in transistor  
1/3  

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