LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTA125TET1G
Applications
•
Inverter, Interface, Driver
3
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
1
2
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
SC-89
3) Only the on/off conditions need to be set for operation,
making the device design easy.
3
R1
COLLECTOR
1
•
We declare that the material of product compliance with
RoHS requirements.
BASE
2
zAbsolute maximum ratings (Ta=25°C)
EMITTER
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
−50
−50
−5
−100
200
Unit
V
V
CBO
VCEO
VEBO
V
V
I
C
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
Pc
Tj
150
Tstg
−55 to +150
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
O9
200
3000/Tape & Reel
10000/Tape & Reel
LDTA125TET1G
LDTA125TET3G
O9
200
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
−50
−50
−5
−
−
−
100
140
−
Typ.
Max.
Unit
Conditions
BVCBO
BVCEO
BVEBO
−
−
−
−
−
−
−
−
V
V
I
I
I
C
= −50µA
= −1mA
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
C
V
E
= −50µA
CB= −50V
EB= −4V
I
CBO
EBO
CE(sat)
FE
µA
µA
V
V
V
−0.5
−0.5
−0.3
600
260
−
Emitter cutoff current
I
V
−
IC
= −0.5mA , I = −0.05mA
B
Collector-emitter saturation voltage
DC current transfer ratio
h
250
200
250
−
kΩ
MHz
IC
= −1mA , VCE= −5V
R1
−
Input resistance
∗
f
T
V
CE= −10V , I =5mA , f=100MHz
E
Transition frequency
Characteristics of built-in transistor
∗
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