LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistors
PNP Silicon Surface Mount Transistors
LDTA114EM3T5G
Series
With Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-723 package
which is designed for low power surface mount applications.
ƽSimplifies Circuit Design
3
2
1
SOT-723
ƽReduces Board Space
ƽReduces Component Count
PIN 3
COLLECTOR
PIN 1
BASE
ƽThe SOT-723 Package can be Soldered using Wave or Reflow.
ƽAvailable in 4 mm, 8000 Unit Tape & Reel
R
(OUTPUT)
1
ƽ
compliance with
We declare that the material of product
(INPUT)
R
2
RoHS requirements.
PIN 2
EMITTER
(GROUND)
MAXIMUM RATINGS (T = 25°C unless otherwise noted)
A
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
Value
50
Unit
Vdc
V
CBO
CEO
MARKING DIAGRAM
V
50
Vdc
I
C
100
mAdc
3
THERMAL CHARACTERISTICS
Characteristic
XX M
Symbol
Max
Unit
Total Device Dissipation
P
260 (Note 1)
600 (Note 2)
2.0 (Note 1)
4.8 (Note 2)
mW
2
1
D
T = 25°C
A
mW/°C
°C/W
°C
Derate above 25°C
xx = Specific Device Code
M
= Date Code
Thermal Resistance –
Junction-to-Ambient
R
480 (Note 1)
205 (Note 2)
θ
JA
Junction and Storage
Temperature Range
T
–55 to +150
J, Tstg
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
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