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LDTA124GET1G_15 PDF预览

LDTA124GET1G_15

更新时间: 2024-10-29 01:13:07
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
3页 285K
描述
Bias Resistor Transistor

LDTA124GET1G_15 数据手册

 浏览型号LDTA124GET1G_15的Datasheet PDF文件第2页浏览型号LDTA124GET1G_15的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
PNP Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
LDTA124GET1G  
Applications  
Inverter, Interface, Driver  
3
Features  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
1
2
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
SC-89  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
3
COLLECTOR  
1
We declare that the material of product compliance with  
RoHS requirements.  
BASE  
R2  
2
z Absolute maximum ratings (Ta=25°C)  
EMITTER  
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Symbol  
Limits  
50  
50  
Unit  
V
V
CBO  
V
CEO  
V
EBO  
V
5  
V
Collector current  
I
C
100  
mA  
mW  
C
Collector power dissipation  
Junction temperature  
Storage temperature  
Pc  
Tj  
200  
150  
Tstg  
55 to +150  
C
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
Q2  
-
22  
3000/Tape & Reel  
10000/Tape & Reel  
LDTA124GET1G  
LDTA124GET3G  
Q2  
-
22  
zElectrical characteristics (T 25°C)  
Parameter  
Symbol  
Min.  
50  
50  
5  
Typ.  
22  
Max.  
Unit  
Conditions  
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
BVCBO  
BVCEO  
BVEBO  
V
V
I
I
I
C
=
=
50µA  
1mA  
330µA  
C
V
E
=
I
CBO  
EBO  
CE(sat)  
FE  
0.5  
260  
0.3  
28.6  
µA  
µA  
V
V
CB  
=
=
50V  
4V  
Emitter cutoff current  
I
140  
V
EB  
Collector-emitter saturation voltage  
DC current transfer ratio  
V
IC  
=
=
10mA , I  
B
=
0.5mA  
h
56  
kΩ  
MHz  
IC  
5mA , VCE  
=
5V  
Emitter-base resistance  
R
15.4  
f
T
250  
V
CE  
=
10V , I  
E
=
=
5mA , f 100MHz  
Transition frequency  
Transition frequency of the device.  
1/3  

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