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LDTA124EET1G PDF预览

LDTA124EET1G

更新时间： 2024-10-29 00:51:47
品牌 Logo 应用领域
乐山 - LRC 晶体管
页数 文件大小 规格书
12页 774K
描述
Bias Resistor Transistors

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中文翻译

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LDTA124EET1G 技术参数

是否Rohs认证：符合生命周期：Contact Manufacturer
包装说明：,Reach Compliance Code：unknown
风险等级：5.78Is Samacsys：N
最大集电极电流 (IC)：0.1 A最小直流电流增益 (hFE)：60
元件数量：1极性/信道类型：PNP
最大功率耗散 (Abs)：0.3 W子类别：BIP General Purpose Small Signal
表面贴装：YES晶体管元件材料：SILICON
Base Number Matches：1

LDTA124EET1G 数据手册

 浏览型号LDTA124EET1G的Datasheet PDF文件第2页浏览型号LDTA124EET1G的Datasheet PDF文件第3页浏览型号LDTA124EET1G的Datasheet PDF文件第4页浏览型号LDTA124EET1G的Datasheet PDF文件第5页浏览型号LDTA124EET1G的Datasheet PDF文件第6页浏览型号LDTA124EET1G的Datasheet PDF文件第7页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistors  
PNP Silicon Surface Mount Transistors  
LDTA114EET1G Series  
with Monolithic Bias Resistor Network  
This new series of digital transistors is designed to replace a single  
device and its external resistor bias network. The BRT (Bias Resistor  
Transistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base-emitter  
resistor. The BRT eliminates these individual components by integrating  
them into a single device. The use of a BRT can reduce both system  
cost and board space. The device is housed in the SC-89 package  
which is designed for low power surface mount applications.  
SC-89  
PIN 3  
COLLECTOR  
(OUTPUT)  
• Simplifies Circuit Design  
PIN 1  
BASE  
(INPUT)  
R
R
1
• Reduces Board Space  
• Reduces Component Count  
2
PIN 2  
EMITTER  
(GROUND)  
• The SC-89 package can be soldered using wave or reflow. The  
modified gull-winged leads absorb thermal stress during soldering  
eliminating the possibility of damage to the die.  
compliance with  
We declare that the material of product  
RoHS requirements.  
•
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Symbol  
Value  
50  
Unit  
Vdc  
V
V
CBO  
CEO  
Collector-Emitter Voltage  
Collector Current  
50  
Vdc  
I
100  
mAdc  
C
THERMAL CHARACTERISTICS  
Rating  
Symbol  
Value  
Unit  
Total Device Dissipation, FR−4 Board  
P
D
(Note 1) @ T = 25°C  
Derate above 25°C  
200  
1.6  
mW  
mW/°C  
A
Thermal Resistance, Junction−to−Ambient  
(Note 1)  
R
q
JA  
600  
°C/W  
Total Device Dissipation, FR−4 Board  
P
D
(Note 2) @ T = 25°C  
Derate above 25°C  
300  
2.4  
mW  
mW/°C  
A
Thermal Resistance, Junction−to−Ambient  
(Note 2)  
400  
°C/W  
R
q
JA  
Junction and Storage Temperature Range  
T , T  
−55 to  
+150  
°C  
J
stg  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
1. FR−4 @ Minimum Pad.  
2. FR−4 @ 1.0 × 1.0 Inch Pad.  
Rev.O 1/12  
1234567...12

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