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LDTA124EET1 PDF预览

LDTA124EET1

更新时间: 2024-10-28 11:37:31
品牌 Logo 应用领域
乐山 - LRC 晶体晶体管
页数 文件大小 规格书
4页 196K
描述
Bias Resistor Transistor

LDTA124EET1 技术参数

是否Rohs认证: 不符合生命周期:Contact Manufacturer
包装说明:,Reach Compliance Code:unknown
风险等级:5.88最大集电极电流 (IC):0.1 A
最小直流电流增益 (hFE):60JESD-609代码:e0
元件数量:1极性/信道类型:PNP
最大功率耗散 (Abs):0.2 W子类别:BIP General Purpose Small Signal
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
晶体管元件材料:SILICONBase Number Matches:1

LDTA124EET1 数据手册

 浏览型号LDTA124EET1的Datasheet PDF文件第2页浏览型号LDTA124EET1的Datasheet PDF文件第3页浏览型号LDTA124EET1的Datasheet PDF文件第4页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
PNP Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
LDTA124EET1  
This new digital transistor is designed to replace a single device  
and its external resistor bias network. The BRT (Bias Resistor Tra-  
nsistor) contains a single transistor with a monolithic bias network  
consisting of two resistors; a series base resistor and a base–emitter  
resistor. The BRT eliminates these individual components by  
integrating them into a single device. The use of a BRT can reduce  
both system cost and board space. The device is housed in the  
SC–89 package which is designed for low power surface mount  
applications.  
3
1
2
SC-89  
Simplifies Circuit Design  
Reduces Board Space  
Reduces Component Count  
3
R1  
R2  
COLLECTOR  
1
BASE  
2
EMITTER  
MAXIMUM RATINGS (T = 25°C unless otherwise noted)  
A
Rating  
Collector-Base Voltage  
Collector-Emitter Voltage  
Collector Current  
Symbol  
Value  
50  
Unit  
Vdc  
V
V
CBO  
50  
Vdc  
CEO  
I
C
100  
mAdc  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
3000/Tape & Reel  
LDTA124EET1  
6B  
22  
22  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Total Device Dissipation,  
FR–4 Board (Note 1.) @ T = 25°C  
Derate above 25°C  
P
D
200  
mW  
mW/°C  
A
1.6  
Thermal Resistance, Junction to Ambient (Note 1.)  
Total Device Dissipation,  
R
600  
°C/W  
θJA  
P
D
FR–4 Board (Note 2.) @ T = 25°C  
300  
2.4  
mW  
mW/°C  
A
Derate above 25°C  
Thermal Resistance, Junction to Ambient (Note 2.)  
Junction and Storage Temperature Range  
R
400  
°C/W  
°C  
θJA  
T , T  
J stg  
–55 to +150  
1. FR–4 @ Minimum Pad  
2. FR–4 @ 1.0 × 1.0 Inch Pad  
P3–1/4  

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