Datasheet > LDTA123EET1G

LDTA123EET1G

更新时间： 2024-10-28 11:37:31

品牌	Logo	应用领域
乐山 - LRC		晶体晶体管
页数	文件大小	规格书
3页	62K
描述
Bias Resistor Transistors

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中文翻译

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技术参数
数据手册

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LDTA123EET1G 技术参数

生命周期：	Contact Manufacturer	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.8
最大集电极电流 (IC)：	0.1 A	最小直流电流增益 (hFE)：	8
元件数量：	1	极性/信道类型：	PNP
最大功率耗散 (Abs)：	0.3 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

LDTA123EET1G 数据手册

LESHAN RADIO COMPANY, LTD.

Bias Resistor Transistors

PNP Silicon Surface Mount Transistors

LDTA123EET1

With Monolithic Bias Resistor Network

This new series of digital transistors is designed to replace a single

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by integrating

them into a single device. The use of a BRT can reduce both system

cost and board space. The device is housed in the SC-89 package

which is designed for low power surface mount applications.

ƽSimplifies Circuit Design

SC-89

PIN 3

COLLECTOR

(OUTPUT)

ƽReduces Board Space

PIN 1

BASE

(INPUT)

ƽReduces Component Count

ƽThe SC-89 Package can be Soldered using Wave or Reflow.

ƽAvailable in 8 mm, 7inch/3000 Unit Tape & Reel

PIN 2

EMITTER

(GROUND)

ƽThis is Pb-Free Device.

DEVICE MARKING AND ORDERING INFORMATION

Device

Marking

Package

Shipping

SC-89

(Pb-Free)

LDTA123EET1G

3000/Tape&Reel

MAXIMUM RATINGS (T = 25°C unless otherwise noted)

MARKING DIAGRAM

Rating

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Symbol

Value

Unit

Vdc

CBO

CEO

Vdc

XX M

100

mAdc

THERMAL CHARACTERISTICS

Characteristic

xx = Specific Device Code

= Date Code

Symbol

Max

Unit

Total Device Dissipation

200 (Note 1)

300 (Note 2)

1.6 (Note 1)

2.4 (Note 2)

T = 25°C

mW/°C

°C/W

°C

Derate above 25°C

Thermal Resistance –

Junction-to-Ambient

400 (Note 2)

Junction and Storage

Temperature Range

J, Tstg

–55 to +150

1. FR–4 @ Minimum Pad

2. FR–4 @ 1.0 x 1.0 inch Pad

Version 1.0

LDTA123EET1-1/3

12 3

中文翻译

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