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LDTA115GET3G PDF预览

LDTA115GET3G

更新时间: 2024-10-29 01:12:35
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
3页 322K
描述
Bias Resistor Transistor

LDTA115GET3G 数据手册

 浏览型号LDTA115GET3G的Datasheet PDF文件第2页浏览型号LDTA115GET3G的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
PNP Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
LDTA115GET1G  
Applications  
Inverter, Interface, Driver  
3
Features  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
1
2
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
SC-89  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
3
We declare that the material of product compliance with  
RoHS requirements.  
COLLECTOR  
1
BASE  
R2  
zAbsolute maximum ratings (Ta=25°C)  
2
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
50  
Unit  
V
EMITTER  
V
CBO  
V
CEO  
VEBO  
50  
V
5  
V
IC  
100  
200  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
Pc  
Tj  
150  
55 to +150  
Tstg  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
100  
3000/Tape & Reel  
10000/Tape & Reel  
LDTA115GET1G  
LDTA115GET3G  
Q4  
Q4  
100  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
I
I
I
C
= −50µA  
= −1mA  
BVCBO  
BVCEO  
BVEBO  
50  
50  
5  
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
C
V
E
= −72µA  
CB= −50V  
EB= −4V  
I
CBO  
EBO  
CE(sat)  
FE  
0.5  
58  
0.3  
µA  
µA  
V
V
V
I
30  
Emitter cutoff current  
V
Collector-emitter saturation voltage  
DC current transfer ratio  
I = −5mA, I = −0.25mA  
C B  
h
82  
70  
I
C
= −5mA, VCE= −5V  
R
100  
250  
130  
kΩ  
MHz  
Emitter-base resistance  
f
T
VCE= −10V, IE=5mA, f=100MHz  
Transition frequency  
Transition frequency of the device.  
1/3  

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