LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTA115GET1G
Applications
•
Inverter, Interface, Driver
3
• Features
1) Built-in bias resistors enable the configuration of an
inverter circuit without connecting external input
resistors (see equivalent circuit).
1
2
2) The bias resistors consist of thin-film resistors with
complete isolation to allow positive biasing of the input.
They also have the advantage of almost completely
eliminating parasitic effects.
SC-89
3) Only the on/off conditions need to be set for operation,
making the device design easy.
3
•
We declare that the material of product compliance with
RoHS requirements.
COLLECTOR
1
BASE
R2
zAbsolute maximum ratings (Ta=25°C)
2
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
Limits
−50
Unit
V
EMITTER
V
CBO
V
CEO
VEBO
−50
V
−5
V
IC
−100
200
mA
mW
°C
°C
Collector power dissipation
Junction temperature
Storage temperature
Pc
Tj
150
−55 to +150
Tstg
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
−
−
100
3000/Tape & Reel
10000/Tape & Reel
LDTA115GET1G
LDTA115GET3G
Q4
Q4
100
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
I
I
I
C
= −50µA
= −1mA
BVCBO
BVCEO
BVEBO
−50
−50
−5
−
−
−
−
−
V
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
C
−
−
V
E
= −72µA
CB= −50V
EB= −4V
I
CBO
EBO
CE(sat)
FE
−
−0.5
−58
−0.3
−
µA
µA
V
V
V
I
−30
−
−
Emitter cutoff current
V
−
Collector-emitter saturation voltage
DC current transfer ratio
I = −5mA, I = −0.25mA
C B
h
82
70
−
−
−
I
C
= −5mA, VCE= −5V
R
100
250
130
−
kΩ
MHz
−
Emitter-base resistance
f
T
VCE= −10V, IE=5mA, f=100MHz
Transition frequency
Transition frequency of the device.
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