5秒后页面跳转
LDTA115GET1G_15 PDF预览

LDTA115GET1G_15

更新时间: 2024-10-29 01:13:07
品牌 Logo 应用领域
乐山 - LRC /
页数 文件大小 规格书
3页 322K
描述
Bias Resistor Transistor

LDTA115GET1G_15 数据手册

 浏览型号LDTA115GET1G_15的Datasheet PDF文件第2页浏览型号LDTA115GET1G_15的Datasheet PDF文件第3页 
LESHAN RADIO COMPANY, LTD.  
Bias Resistor Transistor  
PNP Silicon Surface Mount Transistor  
with Monolithic Bias Resistor Network  
LDTA115GET1G  
Applications  
Inverter, Interface, Driver  
3
Features  
1) Built-in bias resistors enable the configuration of an  
inverter circuit without connecting external input  
resistors (see equivalent circuit).  
1
2
2) The bias resistors consist of thin-film resistors with  
complete isolation to allow positive biasing of the input.  
They also have the advantage of almost completely  
eliminating parasitic effects.  
SC-89  
3) Only the on/off conditions need to be set for operation,  
making the device design easy.  
3
We declare that the material of product compliance with  
RoHS requirements.  
COLLECTOR  
1
BASE  
R2  
zAbsolute maximum ratings (Ta=25°C)  
2
Parameter  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
Symbol  
Limits  
50  
Unit  
V
EMITTER  
V
CBO  
V
CEO  
VEBO  
50  
V
5  
V
IC  
100  
200  
mA  
mW  
°C  
°C  
Collector power dissipation  
Junction temperature  
Storage temperature  
Pc  
Tj  
150  
55 to +150  
Tstg  
DEVICE MARKING AND RESISTOR VALUES  
Device  
Marking  
R1 (K)  
R2 (K)  
Shipping  
100  
3000/Tape & Reel  
10000/Tape & Reel  
LDTA115GET1G  
LDTA115GET3G  
Q4  
Q4  
100  
zElectrical characteristics (Ta=25°C)  
Parameter  
Symbol  
Min.  
Typ.  
Max.  
Unit  
Conditions  
I
I
I
C
= −50µA  
= −1mA  
BVCBO  
BVCEO  
BVEBO  
50  
50  
5  
V
V
Collector-base breakdown voltage  
Collector-emitter breakdown voltage  
Emitter-base breakdown voltage  
Collector cutoff current  
C
V
E
= −72µA  
CB= −50V  
EB= −4V  
I
CBO  
EBO  
CE(sat)  
FE  
0.5  
58  
0.3  
µA  
µA  
V
V
V
I
30  
Emitter cutoff current  
V
Collector-emitter saturation voltage  
DC current transfer ratio  
I = −5mA, I = −0.25mA  
C B  
h
82  
70  
I
C
= −5mA, VCE= −5V  
R
100  
250  
130  
kΩ  
MHz  
Emitter-base resistance  
f
T
VCE= −10V, IE=5mA, f=100MHz  
Transition frequency  
Transition frequency of the device.  
1/3  

与LDTA115GET1G_15相关器件

型号 品牌 获取价格 描述 数据表
LDTA115GET3G LRC

获取价格

Bias Resistor Transistor
LDTA115TET1G LRC

获取价格

Bias Resistor Transistor
LDTA115TET1G_15 LRC

获取价格

Bias Resistor Transistor
LDTA123EET1 LRC

获取价格

Bias Resistor Transistors
LDTA123EET1G LRC

获取价格

Bias Resistor Transistors
LDTA123EM3T5G LRC

获取价格

Bias Resistor Transistors
LDTA123EM3T5G_15 LRC

获取价格

Bias Resistor Transistors
LDTA123JET1 LRC

获取价格

Digital transistors (built-in resistors)
LDTA123JET1G LRC

获取价格

Bias Resistor Transistors
LDTA123JM3T5G LRC

获取价格

Bias Resistor Transistors